BG3123R Infineon Technologies AG, BG3123R Datasheet
BG3123R
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BG3123R Summary of contents
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... Improved cross modulation at gain reduction BG3123 BG3123R ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution! Type Package BG3123 SOT363 BG3123R*** SOT363 * For amp for amp. B *** Target Data 180° rotated tape loading orientation available Maximum Ratings Parameter Drain-source voltage Continuous drain current amp ...
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Thermal Resistance Parameter 1) Channel - soldering point Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage µ G1S G2S Gate1-source breakdown voltage + mA ...
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Electrical Characteristics Parameter AC Characteristics Forward transconductance amp. A amp. B Gate1 input capacitance MHz, amp MHz, amp. B Output capacitance MHz, amp ...
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Total power dissipation P amp. A 300 mW 200 150 100 Drain current G2S amp ...
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Output characteristics 4V Parameter in V G2S G1S amp Gate 1 current G1S V ...
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Gate 1 forward transconductance 5V G2S amp Drain current G1S V = ...
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Drain current amp 5V 4V G2S G1 (connected =gate1 supply voltage ...
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Crossmodulation V = (AGC) unw amp.A 120 dBµV 100 Cossmodulation test circuit R GEN 50 Ohm Crossmodulation amp.B ...