GSD2004S-GS08 Vishay, GSD2004S-GS08 Datasheet

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GSD2004S-GS08

Manufacturer Part Number
GSD2004S-GS08
Description
Manufacturer
Vishay
Datasheet
VISHAY
Dual In-Series Small-Signal High-Voltage Switching Diode
Features
Mechanical Data
Case: SOT-23 (TO-236AB) Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
T
1)
Thermal Characteristics
T
1)
Document Number 85728
Rev. 1.3, 08-Jul-04
• Silicon Epitaxial Planar Diode
• Fast switching dual in-series diode, especially
GSD2004S
Continuous reverse voltage
Peak repetitive reverse voltage
Peak repetitive reverse current
Forward current (continuous)
Peak repetitive forward current
Non-repetitive peak forward
current
Power dissipation
Typical thermal resistance
junction to ambiant air
Junction temperature
Storage temperature range
amb
amb
Device on Fiberglass Substrate, see layout on second page
Device on Fiberglass Substrate, see layout on second page
suited for applications requiring high voltage
capability
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Part
Parameter
Parameter
GSD2004S-GS18 or GSD2004S-GS08
t
t
p
p
= 1 s
= 1 s
Test condition
Test condition
Ordering code
Symbol
Symbol
3
V
R
I
I
I
I
P
RRM
RFM
FSM
FSM
V
RRM
T
I
thJA
T
F
tot
R
S
j
DB6
2
Marking
1
- 65 to + 150
Vishay Semiconductors
Value
350
Value
357
240
300
200
225
625
150
4.0
1.0
1
1)
1)
3
GSD2004S
Tape and Reel
2
Remarks
18545
www.vishay.com
°C /W
Unit
mW
Unit
mA
mA
mA
°C
°C
V
V
A
A
1

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GSD2004S-GS08 Summary of contents

Page 1

... Weight: approx. 8.8 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part GSD2004S GSD2004S-GS18 or GSD2004S-GS08 Absolute Maximum Ratings °C, unless otherwise specified amb Parameter Test condition Continuous reverse voltage ...

Page 2

... GSD2004S Vishay Semiconductors Electrical Characteristics °C, unless otherwise specified amb Parameter Test condition Reverse breakdown voltage I = 100 A R Leakage current V = 240 240 Forward voltage 100 mA F Diode capacitance MHz F R Reverse recovery time mA 100 L 1) Device on Fiberglass Substrate, see layout Layout for R ...

Page 3

... Document Number 85728 Rev. 1.3, 08-Jul-04 Vishay Semiconductors 0.175 (.007) 0.098 (.005) 2.6 (.102) 2.35 (.092) Mounting Pad Layout 0.52 (0.020) 0.9 (0.035) 2.0 (0.079) 0.95 (0.037) 0.95 (0.037) GSD2004S ISO Method E 17418 www.vishay.com 3 ...

Page 4

... GSD2004S Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment ...

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