SI2309DS-T1 Vishay, SI2309DS-T1 Datasheet

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SI2309DS-T1

Manufacturer Part Number
SI2309DS-T1
Description
Manufacturer
Vishay
Datasheet

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Part Number:
SI2309DS-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI2309DS-T1
Quantity:
705
Part Number:
SI2309DS-T1-E3
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VISHAY
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46 000
Part Number:
SI2309DS-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI2309DS-T1-E3
Quantity:
70 000
Part Number:
SI2309DS-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on FR4 Board.
b. t ≤ 5 s.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 70835
S-72216-Rev. C, 22-Oct-07
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
V
DS
- 60
(V)
0.550 at V
0.340 at V
r
DS(on)
a
J
a, b
= 150 °C)
GS
a
GS
(Ω)
= - 4.5 V
= - 10 V
P-Channel 60-V (D-S) MOSFET
a, b
Ordering Information: Si2309DS-T1
A
G
S
I
- 1.25
= 25 °C, unless otherwise noted
D
- 1
Steady State
Steady State
(A)
1
2
L = 0.1 mH
T
T
T
T
A
A
A
A
* Marking Code
Si2309DS (A9)*
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
(SOT-23)
Top View
TO-236
Si2309DS-T1-E3 (Lead (Pb)-free)
3
Symbol
Symbol
T
R
R
J
V
V
I
D
I
P
, T
thJA
DM
thJL
I
AS
GS
DS
D
D
stg
Typical
130
45
- 55 to 150
- 1.25
- 0.85
Limit
± 20
1.25
- 60
0.8
- 8
- 5
Maximum
100
166
60
Vishay Siliconix
Si2309DS
www.vishay.com
°C/W
Unit
Unit
°C
W
RoHS*
V
A
COMPLIANT
Available
Pb-free
1

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SI2309DS-T1 Summary of contents

Page 1

... Surface Mounted on FR4 Board ≤ containing terminations are not RoHS compliant, exemptions may apply. Document Number: 70835 S-72216-Rev. C, 22-Oct- TO-236 (SOT-23 Top View Si2309DS (A9)* * Marking Code Ordering Information: Si2309DS-T1 Si2309DS-T1-E3 (Lead (Pb)-free °C, unless otherwise noted A Symbol ° ° 0 °C ...

Page 2

... Si2309DS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... S-72216-Rev. C, 22-Oct-07 500 400 300 200 100 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 1.0 0.8 0.6 0 °C J 0.2 0.0 0.8 1.0 1.2 Si2309DS Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1. 100 T - Junction Temperature (°C) J On-Resistance vs. Junction Temperature ...

Page 4

... Si2309DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA D 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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