MWS5114D3 Intersil Corporation, MWS5114D3 Datasheet

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MWS5114D3

Manufacturer Part Number
MWS5114D3
Description
1024-Word x 4-Bit LSI Static RAM
Manufacturer
Intersil Corporation
Datasheet
March 1997
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
Features
• Fully Static Operation
• Industry Standard 1024 x 4 Pinout (Same as Pinouts
• Common Data Input and Output
• Memory Retention for Standby Battery Voltage as Low
• All Inputs and Outputs Directly TTL Compatible
• Three-State Outputs
• Low Standby and Operating Power
Ordering Information
Pinout
MWS5114E3
MWS5114D3
MWS5114D3X
for 6514, 2114, 9114, and 4045 Types)
as 2V Min
200ns
MWS5114E2
MWS5114E2X
MWS5114D2
|
Read
Write
Not Selected
Copyright
FUNCTION
250ns
©
Intersil Corporation 1999
MWS5114E1
MWS5114D1
V
CS
A6
A5
A4
A3
A0
A1
A2
SS
CS
0
0
1
OPERATIONAL MODES
1
2
3
4
5
6
7
8
9
300ns
(PDIP, SBDIP)
TOP VIEW
MWS5114
6-160
WE
X
1
0
Description
The MWS5114 is a 1024 word by 4-bit static random access
memory that uses the ion-implanted silicon gate comple-
mentary MOS (CMOS) technology. It is designed for use in
memory systems where low power and simplicity in use are
desirable. This type has common data input and data output
and utilizes a single power supply of 4.5V to 6.5V.
The MWS5114 is supplied in 18 lead, hermetic, dual-in-line
sidebrazed ceramic packages (D suffix) and in 18 lead dual-
in-line plastic packages (E suffix).
Output: Dependent on data
Input
High Impedance
TEMPERATURE RANGE
18
17
16
15
14
13
12
10
11
V
A7
A8
A9
I/O1
I/O2
I/O3
I/O4
WE
0
0
DD
o
o
DATA PINS
C to +70
C to +70
MWS5114
o
o
C
C
PDIP
SBDIP
Burn-In
Burn-In
PACKAGE
1024-Word x 4-Bit
LSI Static RAM
File Number
E18.3
E18.3
D18.3
D18.3
PKG. NO.
1325.2

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MWS5114D3 Summary of contents

Page 1

... Three-State Outputs • Low Standby and Operating Power Ordering Information 200ns 250ns MWS5114E3 MWS5114E2 MWS5114E2X MWS5114D3 MWS5114D2 MWS5114D3X Pinout FUNCTION Read Write Not Selected CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. | http://www.intersil.com or 407-727-9207 Copyright Description ...

Page 2

Functional Block Diagram I/O 1 I/O 2 I MWS5114 MEMORY ARRAY ROW 64 ROWS SELECT 64 COLUMNS COLUMN I/O CIRCUITS INPUT COLUMN SELECT ...

Page 3

Absolute Maximum Ratings DC Supply Voltage Range (All Voltages Referenced to V Terminal -0.5V to +7V SS Input Voltage Range, All Inputs . . . . . . . ...

Page 4

Static Electrical Specifications CONDITIONS PARAMETER SYMBOL (V) (V) Three-State OUT Output Leakage Current (Note 4) Input Capacitance Output OUT Capacitance NOTES Typical ...

Page 5

Dynamic Electrical Specifications (NOTE 1) PARAMETER SYMBOL MIN READ CYCLE TIMES (FIGURE 1) Read Cycle tRC 200 Access from tAA - Address Chip Selection to tCO - Output Valid Chip Selection to tCX 20 Output Active Output Three-State tOTD - ...

Page 6

ADDRESS CS D OUT NOTE high during the Read Cycle. Timing measurement reference level is 1.5V. ADDRESS NOTE low during the Write Cycle. Timing measurement reference level is 1.5V. Data Retention ...

Page 7

... All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use ...

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