CXK581000AP-10LL Sony, CXK581000AP-10LL Datasheet

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CXK581000AP-10LL

Manufacturer Part Number
CXK581000AP-10LL
Description
131072-word x 8-bit High Speed CMOS Static RAM
Manufacturer
Sony
Datasheet

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CXK581000AP-10LL
Manufacturer:
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Part Number:
CXK581000AP-10LL
Quantity:
200
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Description
CMOS static RAM organized as 131072-words by
8 bits.
stand- by current and higher data retention stability.
speed and broad package line-up.
RAM for portable equipment with battery back up.
Features
• Fast access time:
• Low standby current:
• Low data retention current
• Single +5V supply: +5V ±10%
• Low voltage data retention: 2.0V (Min.)
• Broad package line-up
• CXK581000ATM/AYM
• CXK581000AM
• CXK581000AP
Functions
Structure
The CXK581000ATM/AYM/AM/AP is a high speed
A polysilicon TFT cell technology realized extremely low
Special feature are low power consumption, high
The CXK581000ATM/AYM/AM/AP ia a suitable
CXK581000ATM/AYM/AM/AP
CXK581000ATM/AYM/AM/AP
CXK581000ATM/AYM/AM/AP
131072-word
Silicon gate CMOS IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
131072-word
-55SL/70SL/10SL
-55SL/70SL/10SL
-55LL/55SL
-70LL/70SL
-10LL/10SL
8mm
-55LL/70LL/10LL
-55LL/70LL/10LL
8-bit static RAM
20mm 32 pin TSOP package
525mil 32 pin SOP package
600mil 32 pin DIP package
CXK581000ATM/AYM/AM/AP
8-bit High Speed CMOS Static RAM
(Access time)
100ns (Max.)
20µA (Max.)
12µA (Max.)
12µA (Max.)
55ns (Max.)
70ns (Max.)
4µA (Max.)
– 1 –
Block Diagram
32 pin TSOP (Plastic)
32 pin SOP (Plastic)
CXK581000ATM
A10
A11
A13
A15
A16
A14
A12
CE1
CE2
CXK581000AM
WE
OE
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Buffer
Buffer
Buffer
Decoder
Row
-55LL/70LL/10LL
-55SL/70SL/10SL
32 pin TSOP (Plastic)
32 pin DIP (Plastic)
CXK581000AYM
CXK581000AP
I/O 1
1024
I/O Buffer
I/O Gate
Decoder
Memory
Column
Matrix
E92756D53-PP
1024
I/O 8
V
GND
CC

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CXK581000AP-10LL Summary of contents

Page 1

... Low voltage data retention: 2.0V (Min.) • Broad package line-up • CXK581000ATM/AYM 8mm 20mm 32 pin TSOP package • CXK581000AM 525mil 32 pin SOP package • CXK581000AP 600mil 32 pin DIP package Functions 131072-word 8-bit static RAM Structure Silicon gate CMOS IC Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right ...

Page 2

... I/O5 26 I/O6 27 I/O7 28 I/O8 29 CE1 30 A10 Symbol CC IN I/O CXK581000 AP D CXK581000ATM/AYM/AM CXK581000AP CXK581000ATM/AYM/AM Mode I/O pin Not selected High Z Not selected High Z Output disable High Z Read Data out Write Data in ( +70°C, GND = 0V) Min. Typ. 4.5 5.0 2.2 — V –0.3 — ...

Page 3

Electrical Characteristics • DC Characteristics Item Symbol Input leakage current CE1 = V Output leakage current CE1 = V Operating power I V CC1 IN supply current I OUT Min. ...

Page 4

I/O Capacitance Item Symbol Input capacitance C IN I/O capacitance C I/O Note) This parameter is sampled and is not 100% tested. AC Characteristics • AC test conditions (V Item Input pulse high level Input pulse low level input rise ...

Page 5

Read cycle (WE = "H") Item Read cycle time Address access time Chip enable access time (CE1) Chip enable access time (CE2) Output enable to output valid Output hold from address change Chip enable to output in low Z ...

Page 6

Timing Waveform • Read cycle (1) : CE1 = Address Data out • Read cycle ( Address CE1 CE2 OE Data out • Write cycle ( control Address OE CE1 ...

Page 7

Write cycle (2) : CE1 control Address OE CE1 CE2 WE Data in Data out • Write cycle (3) : CE2 control Address OE CE1 CE2 WE Data in Data out 1 Write is executed when both CE1 and ...

Page 8

Data Retention Waveform • Low supply voltage data retention waveform (1) : CE1 control V CC 4.5V 2. CE1 GND • Low supply voltage data retention waveform (2) : CE2 control V CC 4.5V CE2 V DR 0.4V ...

Page 9

Example of Representative Characteristics Supply current vs. Supply voltage 1.5 1.25 1.0 I CC2 I CC1 0.75 0.5 4.5 4. — Supply voltage (V) CC Supply current vs. Frequency 100ns 1.0 Write 0.8 0.6 0.4 0 ...

Page 10

Standby current vs. Supply voltage 2.0 1.5 1 SB1 SB2 0 25°C 0 2.0 3.0 4.0 5.0 V — Supply voltage (V) CC Input voltage level vs. Supply voltage 1.2 1 ...

Page 11

... Package Outline Unit: mm CXK581000ATM + 0.08 0.2 – 0.03 SONY CODE EIAJ CODE JEDEC CODE CXK581000AYM 0.2 – 0.03 NOTE: Dimension “ ” does not include mold protrusion. SONY CODE EIAJ CODE JEDEC CODE 32PIN TSOP (I) (PLASTIC) 8.0 ± 0.2 + 0.2 1.07 – 0 ...

Page 12

... CXK581000AM 20.5 – 0 0.4 ± 0.1 SONY CODE SOP-32P-L02 EIAJ CODE SOP032-P-0525-A JEDEC CODE CXK581000AP 40.2 – 0 SONY CODE DIP-32P-01 EIAJ CODE DIP32-P-0600-A JEDEC CODE 32PIN SOP (PLASTIC) 525mil + 0.4 2.9 – 0. 0.1 1.27 0.15 – 0.05 0.2 ± 0.1 0° to 10° ...

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