AT89C51ED2-IM ATMEL Corporation, AT89C51ED2-IM Datasheet
AT89C51ED2-IM
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AT89C51ED2-IM Summary of contents
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... Qualification Package AT89C51ED2 FLASH 8-bit C51 Microcontroller 64 Kbytes FLASH, 2 Kbytes EEPROM AT89C51RD2 / AT89C51ED2 Rev. 0 – 2003 July AT89C51RD2 / AT89C51ED2 QualPack JULY 2003 1 ...
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... D R ............................................................................................................................................ 18 EVICE ELIABILITY 4.4.1 Operating Life Testing..................................................................................................................................... 18 4.4.2 ESD / Latch-up................................................................................................................................................ 18 4.4.3 FLASH and EEPROM Data Retention and Endurance Cycling ........................................................................ 18 4.4.4 AT89C51ED2 Operating Reliability Calculation.............................................................................................. 20 4.5 AT89C51ED2 P ACKAGING RELIABILITY 4.6 AT89C51ED2 Q UALIFICATION STATUS 5 ENVIRONMENTAL INFORMATION .................................................................................................................... 22 6 OTHER DATA .......................................................................................................................................................... 23 6.1 ISO / TS16949 : 2002 C 6 ...
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... Quality Assurance Reliability Testing Failure Analysis Quality Management Atmel Nantes, France Signed: Pascal LECUYER Rev. 0 – 2003 July AT89C51RD2 / AT89C51ED2 QualPack AT89C51RD2 8-bit Microcontroller with 64 Kbytes FLASH SPI Interface AT89C51E2 8-bit Microcontroller with 64 Kbytes FLASH, 2 Kbytes EEPROM SPI Interface Logic CMOS 0.35 um with embedded FLASH ...
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... Number of Layers Thickness Poly 1 Thickness Poly 2 Metal Number of Layers Material: Layer 1 Thickness Layer 2 Thickness Layer 3 Thickness Passivation Material Thickness 4 AT89C51RD2 / AT89C51ED2 QualPack Logic 0.35um with embedded FLASH (AT56800) Epitaxied Silicon 475 um 150 mm 27 Silicon Dioxide 68A Silicon Dioxide 390A 2 1400A Amorphous 3200A ...
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... Metal 1 Spacing Metal 2 Width Metal 2 Spacing Metal 3 Width Metal 3 Spacing Contact Size Contact Spacing Via 1 Size Via 2 Size Rev. 0 – 2003 July AT89C51RD2 / AT89C51ED2 QualPack 2 17 111 um 0.35 µm 0.35 µm 0.42 µm 0.42 µm 0.49 µm 0.56 µm 0.49 µm 0.56 µ ...
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... Device cross section 6 AT89C51RD2 / AT89C51ED2 QualPack AT56Kxx cross section Rev. 0 – 2003 July ...
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... For each package type proposed in the Datasheet verified that qualification data are available. If not qualification tests are carried out for the new package types. In addition, one package type is selected to verify packaging reliability of the device under qualification. Wafer Level Reliability Rev. 0 – 2003 July AT89C51RD2 / AT89C51ED2 QualPack Product Qualification Device (Design / Process) Reliability ...
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... EIA JESD22-A110 EIA JEDEC 20-STD MIL-STD 883 Method 2003 MIL-STD 883 Method 2015 8 AT89C51RD2 / AT89C51ED2 QualPack Test Description 48 hours 140°C 1000 hours 140°C Dynamic or Static Electrostatic Discharge HBM +/-2000v 1.5kOhm/100pF/3 pulses Latch up NVM Endurance Program Erase Cycles 25°C NVM Data Retention High Temperature Storage 165° ...
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... Accel = 31.75, Accel temp Conclusion: All splits pass the minimum 10 years lifetime. Rev. 0 – 2003 July AT89C51RD2 / AT89C51ED2 QualPack = ~ 28 hrs x 39706 accel = 127 years. = 130, Accel = 306) current = ~ 140 hrs x 39706 accel = 634 years. .01 130, Accel ...
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... Test results : AT56800 metal 1 results AT56800 VIA results Electromigration summary table: Level Sample Size Via 15 10 AT89C51RD2 / AT89C51ED2 QualPack Fails @ Tf.1% 10% Lifetime (yrs) 9 140 7 1088 9 19 AT56800 metal 3 results Rev. 0 – 2003 July ...
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... The extrapolated life time in the worst case conditions (@Vds=Vdd max & Vgs set to maximize substrate current) is much greater than 0.2 years in DC mode (qualification requirement) which is equivalent to more than 10 years in AC mode. Rev. 0 – 2003 July AT89C51RD2 / AT89C51ED2 QualPack 10% Change in Idsat 30,692 y = 5E+16x ...
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... GAMMA is the Field acceleration constant, Eox is the oxide field the activation energy of this failure mechanism Boltzmann’s constant the Kelvin Temperature, and fitting constant. 12 AT89C51RD2 / AT89C51ED2 QualPack 2 10.0MV/cm N=5 N=5 N=5 th capacitor, 10.5MV/cm ...
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... E+00 E+01 E+02 AT56.8K Active Edge TDDB 175C 2,00000E+00 1,00000E+00 0,00000E+00 -1,00000E+00 -2,00000E+00 1,00 1,00 E+00 E+01 E+02 Rev. 0 – 2003 July AT89C51RD2 / AT89C51ED2 QualPack 1,00 1,00 1,00 1,00 E+03 E+04 E+05 Tbd (sec) 1,00 1,00 1,00 1,00 E+03 E+04 E+05 Tbd (sec) AT56 ...
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... MP044 0R5414 #01 Vsel=Vsen+2.1 Bit 0 (near byte sel) 7 6.5 6 5.5 5 4.5 4 3 100 1000 # cycles 14 AT89C51RD2 / AT89C51ED2 QualPack st column) th column). 15.5V on sense / 17.6V on select 16.5V on sense / 17.6V on select 13.5V 14.5V 15.5V 16.5V 10000 100000 13.5V 14.5V 15.5V 16.5V 10000 100000 MP044 0R5414 #01 Vsel=Vbl+2 ...
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... Bake time (h) Test measurements Conclusions : Extrapolation to 125°C - 10years = Vt loss is less than 0.8 mV Rev. 0 – 2003 July AT89C51RD2 / AT89C51ED2 QualPack 290,0 270,0 250,0 100 230,0 210,0 200C 190,0 250C 170,0 150 100 1000 ...
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... Time (s) Conclusion: Extrapolation to 10 years lifetime give a maximum BL voltage of around 4V in read operation, which is much higher than nominal BL read voltage (~1V). So there is no sensitivity to read disturb either at room temperature or high temperature. 16 AT89C51RD2 / AT89C51ED2 QualPack 2.5 2 Vbl=6V 1.5 Vbl=6.5V Vbl=7V Vbl=7.5V ...
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... Lot Wafer 1G4448 1G4448 1G4448 Total Conclusion: Data Retention measurements at wafer probe stand out high data retention capability of AT56800 products, exceeding the technology requirement of ten years. Rev. 0 – 2003 July AT89C51RD2 / AT89C51ED2 QualPack % Retention loss Failure rate Time to failure extrapolation at 55° ...
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... Test Description A01948 AT89C51ED2 ESD-HBM Model PLCC 44 LATCH-UP Over-Voltage Power Injection 4.4.3 FLASH and EEPROM Data Retention and Endurance Cycling AT89C51ED2 test results are summarized in the table below. Lot Device Type Test Description A01948K AT89C51ED2 Data Retention PLCC 44 Program / Erase Endurance Cycling ...
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... AT56800 FLASH / EEPROM Reliability Calculation: Global AT56800 Data-Retention Test Calculation Microcontrollers Endurance Cycling Rev. 0 – 2003 July AT89C51RD2 / AT89C51ED2 QualPack A01110 - 125d Endurance 15 10 LEGEND 5 fail Count 0 010000 30000 50000 70000 90000 110000 Number of cycles Endurance Temperature Acceleration ...
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... AT89C51ED2 Operating Reliability Calculation In the next table proposed a AT89C51ED2 reliability prediction calculated at 55°c for 60% confidence level from generic test data collected over the 12 last months process monitor. Lots Device Type Test Description A00648 T89C51CC01 EFR Dynamic Life Test P01709 ...
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... AT89C51ED2 Qualification status Atmel digital 0.35 um wafer process is qualified since 1999, October. Derived from this technology, AT89C51RD2 / AT89C51ED2 have passed successfully Reliability Testing. Full qualification has been pronounced in June 2003. All package pass Level 1 of Moisture Sensitivity Ranking as per JESD 20B. Therefore, Dry Packing is not mandatory. Rev. 0 – ...
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... Reducing the content of harmful materials in its products - Using re-usable materials wherever possible - Reducing the energy content of its products As part of that plan, Ozone Depleting Chemicals are being replaced either by Atmel Nantes or its sub-contractors. Atmel Nantes site is ISO14001 certified since May 2000. 22 AT89C51RD2 / AT89C51ED2 QualPack Rev. 0 – 2003 July ...
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... Other Data 6.1 ISO / TS16949 : 2002 Certificate Rev. 0 – 2003 July AT89C51RD2 / AT89C51ED2 QualPack 23 ...
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... Before use of such reproduced material the user should check that the information is current. Written permission must be obtained from the publisher for complete reprints or translations 24 AT89C51RD2 / AT89C51ED2 QualPack Modification Notice Application Date 2003 July ...