M27512-2F1 STMicroelectronics, M27512-2F1 Datasheet
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M27512-2F1
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M27512-2F1 Summary of contents
Page 1
... The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM organized as 65,536 words by 8 bits. The M27512 is housed Pin Window Ce- ramic Frit-Seal Dual-in-Line package. The trans- parent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pat- tern can then be written to the device by following the programming procedure ...
Page 2
... The M27512 has a standby mode which reduces Q5 the maximum active power current from 125mA to Q4 40mA. The M27512 is placed in the standby mode Q3 by applying a TTL high signal to the E input. When in the standby mode, the outputs are in a high impedance state, independent of the GV ...
Page 3
... PP Programming When delivered, and after each erasure, all bits of the M27512 are in the “1" state. Data is introduced by selectively programming ”0s" into the desired bit locations. Although only “0s” will be programmed, both “1s” and “0s” can be present in the data word. ...
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... M27512 AC MEASUREMENT CONDITIONS Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages Note that Output Hi-Z is defined as the point where data is no longer driven. Figure 3. AC Testing Input Output Waveforms 2.4V 0.45V (1) Table 5. Capacitance ( MHz ) A Symbol ...
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... Test Condition Min –0 2.1mA –400 A OH 11.5 and removed simultaneously or after V PP M27512 ) CC Min Max Unit 10 10 125 –0.1 0 0. M27512 Unit blank 200 250 300 ns 200 250 300 ns 75 100 120 105 105 Max Unit 10 A 150 0 0. ...
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... M27512 Table 9. MARGIN MODE AC Characteristics ( 6.25V 0.25V Symbol Alt Parameter t t VA9 High to V A9HVPH AS9 High to Chip Enable Low VPHEL VPS PP VA10 High to Chip Enable t t A10HEH AS10 High (Set) VA10 Low to Chip Enable High t t A10LEH AS10 (Reset) Chip Enable Transition to ...
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... Note: A8 High level = 5V; A9 High level = 12V. Figure 7. Programming and Verify Modes AC Waveforms A0-A15 tAVEL Q0-Q7 tQVEL V CC tVCHEL GV PP tVPHEL E tA9HVPH tVPXA9X tVPHEL tEXVPX tA10HEH tA10LEH VALID DATA IN tEHQX tEHVPX tVPLEL tELEH PROGRAM M27512 tEXA10X AI00736B tEHAX DATA OUT tEHQZ tELQV VERIFY AI00737 7/11 ...
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... Except for E, all like inputs (including GV ). When the Fast M27512 may be common. A TTL low level pulse applied to a M27512’s E input, with GV will program that M27512. A high level E input inhibits the other M27512s from being pro- grammed ...
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... W-sec/cm . The erasure time with this dosage is ) the device IH approximately minutes using an ultraviolet lamp with 12000 M27512 should be placed within 2 inch) of the lamp tubes during the erasure. Some lamps have a filter on their tubes which should be re- moved before erasure. M27512 - ...
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... M27512 FDIP28W - 28 pin Ceramic Frit-seal DIP, with window Symb Typ 2.54 e3 33. 7. Drawing is not to scale 10/11 mm Min Max Typ 5.71 0.50 1.78 3.90 5.08 0.40 0.55 1.17 1.42 0.22 0.31 38.10 15.40 15.80 13.05 13.36 – – 0.100 – – 1.300 16 ...
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... All other names are the property of their respective owners Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 2000 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES www.st.com M27512 11/11 ...