W27E040P-12 Winbond, W27E040P-12 Datasheet

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W27E040P-12

Manufacturer Part Number
W27E040P-12
Description
512K*8 bits high speed, low power electrically erasable EPROM
Manufacturer
Winbond
Datasheet

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GENERAL DESCRIPTION
The W27E040 is a high speed, low power Electrically Erasable and Programmable Read Only
Memory organized as 524288
provides an electrical chip erase function.
FEATURES
PIN CONFIGURATIONS
High speed access time:
90/120 nS (max.)
Read operating current: 15 mA (typ.)
Erase/Programming operating current
15 mA (typ.)
Standby current: 5 A (typ.)
Single 5V power supply
A14
A17
A18
A16
A15
A11
A13
V
V
A12
A6
A5
A9
A8
A7
A4
CC
PP
16
11
12
13
14
15
1
2
3
4
5
6
7
8
9
10
GND
V
A15
A12
A3
512K
A16
A7
A6
A5
A4
A2
A1
A0
Q0
Q0
Q1
Q2
A7
A6
A5
A4
A3
A2
A1
A0
PP
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
10
11
12
13
5
6
7
8
9
14
4
A
1
2
Q
1
15
A
1
5
3
Q
2
32-pin
16
2
G
N
D
A
1
6
DIP
32-pin
PLCC
32-pin
TSOP
17
1
Q
3
V
P
P
32
18
C
C
Q
V
4
31
19
A
1
8
Q
5
8 ELECTRICALLY ERASABLE EPROM
30
20
Q
A
6
1
7
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
29
28
27
26
25
24
23
22
21
V
A18
A17
A14
A13
A8
A9
A11
OE
A10
CE
Q7
Q6
Q5
Q4
Q3
CC
A14
A13
A8
A11
OE
A10
CE
Q7
A9
8 bits that operates on a single 5 volt power supply. The W27E040
32
31
30
29
28
27
26
25
24
23
22
20
19
18
17
21
OE
A10
CE
Q7
Q6
Q5
Q4
Q3
GND
Q2
Q1
Q0
A0
A1
A2
A3
- 1 -
mil SOP, PLCC and TSOP
BLOCK DIAGRAM
PIN DESCRIPTION
+14V erase/+12V programming voltage
Fully static operation
All inputs and outputs directly TTL/CMOS
compatible
Three-state outputs
Available packages: 32-pin 600 mil DIP, 450
SYMBOL
A0 A18
Q0 Q7
GND
V
V
OE
CE
NC
GND
CC
V
PP
V PP
A18
CC
CE
OE
A0
.
.
Address Inputs
Data Inputs/Outputs
Chip Enable
Output Enable
Program/Erase Supply Voltage
Power Supply
Ground
No Connection
DECODER
CONTROL
Publication Release Date: May 1997
DESCRIPTION
OUTPUT
BUFFER
CORE
ARRAY
W27E040
Revision A1
Q0
Q7
.
.

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W27E040P-12 Summary of contents

Page 1

ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27E040 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 524288 provides an electrical chip erase function. FEATURES High speed access time: 90/120 nS (max.) Read ...

Page 2

FUNCTIONAL DESCRIPTION Read Mode Like conventional UVEPROMs, the W27E040 has two control functions, both of which produce data at the outputs for power control and chip select. OE controls the output buffer to gate data to the output ...

Page 3

Standby Mode The standby mode significantly reduces V and V = 5V. In standby mode, all outputs are in a high impedance state, independent of OE. CC Two-line Output Control Since EPROMs are often used in large memory arrays, the ...

Page 4

DC CHARACTERISTICS Absolute Maximum Ratings PARAMETER Ambient Temperature with Power Applied Storage Temperature Voltage on all pins with Respect to Ground Except V and V pins CC Voltage on V Pin with Respect to Ground PP Voltage on A9 Pin ...

Page 5

AC CHARACTERISTICS AC Test Conditions PARAMETER Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level Output Load AC Test Load and Waveform D OUT Input 2.4V 0.45V 0.45V to 2. 0.8V/2. ...

Page 6

READ OPERATION DC CHARACTERISTICS (V = 5.0V 10 PARAMETER SYM. Input Load Current I LI Output Leakage Current Standby Current SB1 V Operating Current I ...

Page 7

DC PROGRAMMING CHARACTERISTICS (V = 5.0V 10 PARAMETER Input Load Current V Program Current CC V Program Current PP Input Low Voltage Input High Voltage Output Low Voltage (Verify) Output High Voltage ...

Page 8

TIMING WAVEFORMS AC Read Waveform V IH Address High Z Outputs Erase Waveform Read Manufacturer SID A0= V Others = Address ...

Page 9

Timing Waveforms, continued Programming Waveform V IH Address V IL Data 12. 5. Program Program Verify Address Stable Address Stable T DFP Data In ...

Page 10

SMART PROGRAMMING ALGORITHM Increment Address *: Program the whole chip again without data verification and read. Start Address = First Location Vcc = 5V Vpp = 12V Program One 100 S Pulse Increment X Yes X = ...

Page 11

SMART ERASE ALGORITHM Increment Address Start Vcc = 5V Vpp = 14V A9 = 14V Chip Erase 100 mS Pulse Address = First Location Increment X Fail Erase Verify Pass No Last Address? ...

Page 12

... W27E040-12 120 W27E040S-90 90 W27E040S-12 120 W27E040P-90 90 W27E040P-12 120 W27E040T-90 90 W27E040T-12 120 Notes: 1. Winbond reserves the right to make changes to its products without prior notice. 2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications where personal injury might occur as a consequence of product failure. ...

Page 13

PACKAGE DIMENSIONS 32-pin P-DIP 32-Lead SO Wide Body Seating Plane Base Plane 1 Seating Plane ...

Page 14

Package Dimensions, continued 32-Lead PLCC Seating Plane 32-Lead TSOP 0.10(0.004 ...

Page 15

... No. 115, Sec. 3, Min-Sheng East Rd., Taipei, Taiwan TEL: 886-2-27190505 FAX: 886-2-27197502 Note: All data and specifications are subject to change without notice. Winbond Electronics North America Corp. Winbond Memory Lab. Winbond Microelectronics Corp. Winbond Systems Lab. 2727 N. First Street, San Jose, CA 95134, U.S.A. ...

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