CY62158CV25LL-70BAI Cypress Semiconductor Corporation., CY62158CV25LL-70BAI Datasheet

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CY62158CV25LL-70BAI

Manufacturer Part Number
CY62158CV25LL-70BAI
Description
Manufacturer
Cypress Semiconductor Corporation.
Datasheet

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CY62158CV25LL-70BAI
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Cypress Semiconductor Corporation
Document #: 38-05019 Rev. *C
Features
Functional Description
The CY62158CV25/30/33 are high-performance CMOS static
RAMs organized as 1024K words by 8 bits. This device fea-
tures advanced circuit design to provide ultra-low active cur-
rent. This is ideal for providing More Battery Life™ (MoBL™)
Logic Block Diagram
• High Speed
• Voltage range:
• Ultra low active power
• Low standby power
• Easy memory expansion with CE
• Automatic power-down when deselected
• CMOS for optimum speed/power
— 55 ns and 70 ns availability
— CY62158CV25: 2.2V–2.7V
— CY62158CV30: 2.7V–3.3V
— CY62158CV33: 3.0V–3.6V
— Typical active current: 1.5 mA @ f = 1 MHz
— Typical active current: 5.5 mA @ f = f
CE
CE
1
2
WE
OE
A
A
A
A
A
A
A
A
A
A
A
A
A
11
12
10
1
9
0
1
2
3
4
5
6
7
8
, CE
2
max
and OE features
3901 North First Street
(70 ns speed)
Data in Drivers
1024K x 8
DECODER
COLUMN
ARRAY
POWER
DOWN
in portable applications such as cellular telephones. The de-
vice also has an automatic power-down feature that signifi-
cantly reduces power consumption by 80% when addresses
are not toggling. The device can be put into standby mode
reducing power consumption by more than 99% when dese-
lected (CE
Writing to the device is accomplished by taking Chip Enable 1
(CE
(CE
then written into the location specified on the address pins (A
through A
Reading from the device is accomplished by taking Chip En-
able 1 (CE
2 (CE
these conditions, the contents of the memory location speci-
fied by the address pins will appear on the I/O pins.
The eight input/output pins (I/O
high-impedance state when the device is deselected (CE
LOW and CE
during a write operation (CE
LOW).
The CY62158CV25/30/33 are available in a 48-ball FBGA
package.
1
2
1024K x 8 MoBL Static RAM
) and Write Enable (WE) inputs LOW and Chip Enable 2
) HIGH. Data on the eight I/O pins (I/O
2
) HIGH while forcing Write Enable (WE) HIGH. Under
19
1
1
San Jose
).
) and Output Enable (OE) LOW and Chip Enable
HIGH or CE
2
HIGH), the outputs are disabled (OE HIGH), or
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
2
LOW).
0
1
2
3
4
5
6
7
CY62158CV25/30/33
CA 95134
1
LOW and CE
0
through I/O
Revised April 24, 2002
0
7
2
) are placed in a
through I/O
HIGH and WE
408-943-2600
MoBL™
7
) is
0
1

Related parts for CY62158CV25LL-70BAI

CY62158CV25LL-70BAI Summary of contents

Page 1

Features • High Speed — and 70 ns availability • Voltage range: — CY62158CV25: 2.2V–2.7V — CY62158CV30: 2.7V–3.3V — CY62158CV33: 3.0V–3.6V • Ultra low active power — Typical active current: 1 MHz — ...

Page 2

Pin Configurations Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) Storage Temperature . ................................–65°C to +150°C Ambient Temperature with Power Applied. ..............................................55°C to +125°C Supply Voltage to Ground Potential ...–0.5V ...

Page 3

Electrical Characteristics Over the Operating Range Parameter Description V Output HIGH Voltage OH V Output LOW Voltage OL V Input HIGH Voltage IH V Input LOW Voltage IL I Input Leakage Current GND < Output Leakage OZ ...

Page 4

Electrical Characteristics Over the Operating Range (continued) Parameter Description V Output HIGH Voltage OH V Output LOW Voltage OL V Input HIGH Voltage IH V Input LOW Voltage IL I Input Leakage Current GND < Output Leakage ...

Page 5

AC Test Loads and Waveforms OUTPUT INCLUDING JIG AND SCOPE Equivalent to: THÉ VENIN EQUIVALENT R TH OUTPUT Parameters 2.5V R1 16 1.20 TH Data Retention Characteristics Parameter Description ...

Page 6

Switching Characteristics Over the Operating Range Parameter READ CYCLE t Read Cycle Time RC t Address to Data Valid AA t Data Hold from Address Change OHA t CE LOW and CE ACE LOW to Data Valid ...

Page 7

Switching Waveforms Read Cycle No. 1 (Address Transition Controlled) ADDRESS DATA OUT PREVIOUS DATA VALID Read Cycle No. 2 (OE Controlled) ADDRESS HIGH IMPEDANCE DATA OUT t LZCE SUPPLY CURRENT Notes: ...

Page 8

Switching Waveforms Write Cycle No. 1(WE Controlled) ADDRESS DATA I/O NOTE 15 t HZOE Write Cycle No. 2( Controlled ADDRESS DATA I/O ...

Page 9

Switching Waveforms Write Cycle No. 3 (WE Controlled, OE LOW) ADDRESS NOTE 15 DATAI/O Document #: 38-05019 Rev. *C [16 SCE PWE t HZWE CY62158CV25/30/ ...

Page 10

Typical DC and AC Characteristics (Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V Operating Current vs. Supply Voltage 14.0 MoBL 12.0 10 ns) max ...

Page 11

... Ordering Information Speed (ns) Ordering Code 70 CY62158CV25LL-70BAI CY62158CV30LL-70BAI CY62158CV33LL-70BAI 55 CY62158CV30LL-55BAI CY62158CV33LL-55BAI Package Diagrams 48-Ball ( 1.2 mm) FBGA BA48F MoBL, MoBL2 and More Battery Life are trademarks of Cypress Semiconductor Corporation. All product and company names mentioned in this document may be the trademarks of their respective holders. ...

Page 12

Document Title: CY62158CV25/30/33 MoBL™, 1024K x 8 MoBL Static RAM Document Number: 38-05019 Issue REV. ECN NO. Date ** 106361 05/22/01 *A 107773 07/16/01 *B 111945 01/31/02 *C 114219 05/01/02 Document #: 38-05019 Rev. *C Orig. of Change Description of ...

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