CY7C199 Cypress Semiconductor Corporation., CY7C199 Datasheet

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CY7C199

Manufacturer Part Number
CY7C199
Description
Manufacturer
Cypress Semiconductor Corporation.
Datasheet

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Cypress Semiconductor Corporation
Document #: 38-05160 Rev. *B
Features
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
CE
WE
• High speed
• Fast t
• CMOS for optimum speed/power
• Low active power
• Low standby power
• 2V data retention (“L” version only)
• Easy memory expansion with CE and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
• Available in pb-free 28-pin TSOP I and 28-pin (300-Mil)
OE
Logic Block Diagram
— 12 ns
— 495 mW (Max, “L” version)
— 0.275 mW (Max, “L” version)
Molded DIP
A
A
A
A
A
A
A
A
A
A
0
1
2
3
4
5
6
7
8
9
DOE
INPUT BUFFER
DECODER
COLUMN
ARRAY
32K x 8
POWER
DOWN
198 Champion Court
L
L
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
Functional Description
The CY7C199 is a high-performance CMOS static RAM
organized as 32,768 words by 8 bits. Easy memory expansion
is provided by an active LOW Chip Enable (CE) and active
LOW Output Enable (OE) and tri-state drivers. This device has
an automatic power-down feature, reducing the power
consumption by 81% when deselected. The CY7C199 is in the
standard 300-mil-wide DIP, SOJ, and LCC packages.
An active LOW Write Enable signal (WE) controls the
writing/reading operation of the memory. When CE and WE
inputs are both LOW, data on the eight data input/output pins
(I/O
addressed by the address present on the address pins (A
through A
the device and enabling the outputs, CE and OE active LOW,
while WE remains inactive or HIGH. Under these conditions,
the contents of the location addressed by the information on
address pins are present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and Write Enable
(WE) is HIGH. A die coat is used to improve alpha immunity.
0
1
2
3
4
5
6
7
0
through I/O
–12
160
V
12
10
WE
A
A
OE
A
A
A
A
CC
A
A
A
A
A
10
11
14
1
2
3
4
5
6
7
8
9
San Jose
). Reading the device is accomplished by selecting
22
23
24
25
26
27
28
1
2
3
4
5
6
7
Pin Configurations
7
GND
) is written into the memory location
I/O
I/O
I/O
A
A
A
A
A
,
A
A
A
A
A
10
11
12
13
14
5
6
7
8
9
0
1
2
CA 95134-1709
0.05
32K x 8 Static RAM
–15
155
15
90
10
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Top View
(not to scale)
DIP
Top View
TSOP I
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Revised August 3, 2006
V
WE
A
A
A
OE
A
CE
I/O
I/O
I/O
I/O
I/O
A
CC
3
2
1
0
4
3
7
6
5
4
–20
150
20
10
CY7C199
408-943-2600
21
20
19
18
17
16
15
14
13
12
11
10
9
8
Unit
mA
mA
ns
A
CE
I/O
I/O
I/O
I/O
I/O
GND
I/O
I/O
I/O
A
A
A
0
14
13
12
7
6
5
4
3
2
1
0
0
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CY7C199 Summary of contents

Page 1

... LOW Chip Enable (CE) and active LOW Output Enable (OE) and tri-state drivers. This device has an automatic power-down feature, reducing the power consumption by 81% when deselected. The CY7C199 is in the standard 300-mil-wide DIP, SOJ, and LCC packages. An active LOW Write Enable signal (WE) controls the writing/reading operation of the memory ...

Page 2

... CE > Com’ > < MAX , Com’ – 0. > V – 0. < 0.3V CY7C199 [1] ................................ –0. 0.5V CC [2] Ambient Temperature V CC ° ° 5V ± 10 +70 C -15 -20 Min. Max. Min. Max. Unit 2.4 2.4 0.4 0 ...

Page 3

... SCOPE (b) 1.73V Over the Operating Range (L-version only) [6] Conditions 2.0V > V – 0.3V > V – 0. DATA RETENTION MODE 3.0V V > CY7C199 Max. Unit ALL INPUT PULSES 90% 90% 10% 10% ≤t ≤ Min. Max. Unit 2.0 V µ < ...

Page 4

... less than less than t , and t HZCE LZCE HZOE LZOE HZWE and t . HZWE SD CY7C199 -15 -20 Max. Min. Max. Unit ...

Page 5

... Device is continuously selected HIGH for read cycle. 14. Address valid prior to or coincident with CE transition LOW. Document #: 38-05160 Rev OHA DOE DATA VALID 50% CY7C199 DATA VALID t HZOE t HZCE HIGH IMPEDANCE t PD ICC 50% ISB Page [+] Feedback ...

Page 6

... Data I/O is high impedance 16 goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state. Document #: 38-05160 Rev PWE t SD DATA VALID SCE DATA VALID IN CY7C199 Page [+] Feedback ...

Page 7

... CC V =5. 0.0 –55 25 125 AMBIENT TEMPERATURE (°C) NORMALIZED ACCESS TIME vs. AMBIENT TEMPERATURE 1.6 1.4 1.2 1.0 V =5.0V CC 0.8 0.6 –55 25 125 AMBIENT TEMPERATURE (°C) CY7C199 LZWE OUTPUT SOURCE CURRENT vs. OUTPUT VOLTAGE 120 100 80 V =5. =25° 0.0 1.0 2.0 3.0 4.0 OUTPUT VOLTAGE (V) OUTPUT SINK CURRENT vs. OUTPUT VOLTAGE ...

Page 8

... CAPACITANCE (pF) Mode Deselect/Power-down Read Write Deselect, Output disabled Package Diagram Package Type 51-85071 28-pin TSOP I (Pb-free) 51-85071 28-pin TSOP I (Pb-free) 51-85014 28-pin (300-Mil) Molded DIP (Pb-free) CY7C199 NORMALIZED I vs. CYCLE TIME CC 1.25 V =5. =25°C A 1.00 V =0.5V IN 0.75 0.50 10 ...

Page 9

... SEATING PLANE 1.345[34.16] 1.385[35.18] 0.120[3.05] 0.140[3.55] 0.015[0.38] 0.060[1.52] 0.055[1.39] 0.065[1.65] 0.015[0.38] 0.020[0.50] SEE LEAD END OPTION CY7C199 DIMENSIONS IN INCHES [MM] MIN. MAX. REFERENCE JEDEC MO-095 PACKAGE WEIGHT: 2.15 gms 0.290[7.36] 0.325[8.25] 0.009[0.23] 3° MIN. 0.012[0.30] 0.310[7.87] 0.385[9.78] 51-85014-*D Page [+] Feedback ...

Page 10

... The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. CY7C199 51-85071-*G ...

Page 11

... Document History Page Document Title: CY7C199 32K x 8 Static RAM Document Number: 38-05160 Issue Orig. of REV. ECN NO. Date Change ** 109971 10/28/01 *A 121730 01/09/02 *B 492500 See ECN Document #: 38-05160 Rev. *B Description of Change SZV Change from Spec number: 38-00239 to 38-05160 DFP Updated Product Offering table ...

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