NTS4101P ON Semiconductor, NTS4101P Datasheet

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NTS4101P

Manufacturer Part Number
NTS4101P
Description
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTS4101P

Dc
05+

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NTS4101P
Power MOSFET
−20 V, −1.37 A, Single P−Channel, SC−70
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
© Semiconductor Components Industries, LLC, 206
March, 2006 − Rev. 2
MAXIMUM RATINGS
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Power Dissipation
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode), Continuous
Lead Temperature for Soldering Purposes
Junction−to−Ambient – Steady State (Note 1)
Digital Cameras, PDAs
Leading −20 V Trench for Low R
−2.5 V Rated for Low Voltage Gate Drive
SC−70 Surface Mount for Small Footprint (2x2 mm)
Pb−Free Package is Available
High Side Load Switch
Charging Circuit
Single Cell Battery Applications such as: Cell Phones,
(Cu area = 1.127 in sq [1 oz] including traces).
Current (Note 1)
(Note 1)
(1/8” from case for 10 s)
Parameter
Parameter
(T
Steady
Steady
J
State
State
= 25°C unless otherwise stated)
t
p
= 10 ms
T
T
T
A
A
A
DS(on)
= 25°C
= 70°C
= 25°C
Symbol
Symbol
V
T
R
V
I
P
T
DSS
DM
STG
T
I
I
qJA
GS
D
S
J
D
L
,
−55 to
Value
−1.37
−0.62
0.329
−4.0
−0.5
Max
−20
150
260
380
±8
1
Units
Units
°C/W
°C
°C
W
V
V
A
A
A
†For information on tape and reel specifications,
NTS4101PT1
NTS4101PT1G
V
SC−70/SOT−323
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
(BR)DSS
−20 V
1
CASE 419
Device
STYLE 8
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
2
ORDERING INFORMATION
TT
M
G
G
104 mW @ −2.5 V
3
83 mW @ −4.5 V
88 mW @ −3.6 V
http://onsemi.com
P−Channel MOSFET
R
DS(on)
(Pb−Free)
SOT−323
SOT−323
Package
= Device Code
= Date Code*
= Pb−Free Package
MARKING DIAGRAM &
Typ
Publication Order Number:
PIN ASSIGNMENT
S
D
1
G
TT M G
3000/Tape & Reel
3000/Tape & Reel
D
G
Shipping
3
NTS4101P/D
S
−1.37 A
I
D
2
Max

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NTS4101P Summary of contents

Page 1

... P−Channel MOSFET MARKING DIAGRAM & PIN ASSIGNMENT Device Code M = Date Code Pb−Free Package ORDERING INFORMATION † Package Shipping SOT−323 3000/Tape & Reel SOT−323 3000/Tape & Reel (Pb−Free) Publication Order Number: NTS4101P/D ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance CHARGES AND CAPACITANCES Input Capacitance ...

Page 3

−4 −3.5 V −3 −2.5 V −2 −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0. −4.5 V ...

Page 4

TOTAL GATE CHARGE (nC) g Figure 7. Gate−to−Source and Drain−to−Source Voltage versus Total Charge TYPICAL CHARACTERISTICS ...

Page 5

... BSC 0.026 BSC 0.425 REF 0.017 REF 2.00 2.10 2.40 0.079 0.083 0.095 mm inches ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTS4101P/D ...

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