M63800FP Samsung, M63800FP Datasheet

no-image

M63800FP

Manufacturer Part Number
M63800FP
Description
Manufacturer
Samsung
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M63800FP
Manufacturer:
MITSUBIS
Quantity:
20 000
DESCRIPTION
M63800FP is a seven-circuit output-sourcing Darlington
transistor array. The circuits are made of PNP and NPN tran-
sistors. This semiconductor integrated circuit performs high-
current driving with extremely low input-current supply.
FEATURES
APPLICATION
Drives of relays, printers, LEDs, fluorescent display tubes
and lamps, and interfaces between MOS-bipolar logic sys-
tems and relays, solenoids, or small motors
FUNCTION
The M63800FP has seven circuits, which are made of input
inverters and current-sourcing outputs. The outputs are
made of PNP transistors and NPN Darlington transistors.
The PNP transistor base current is constant. A spike-killer
clamping diode is provided between each output pin and
GND. V
the eight circuits.
The input has resistance of 3k , and a maximum of 10V can
be applied. The output current is 500mA maximum. Supply
voltage V
The M63800FP is enclosed in a molded small flat package,
enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS
# : Unused I/O pins must be connected to GND.
V
V
V
I
I
V
P
T
T
O
F
High breakdown voltage (BV
High-current driving (Io(max) = –500mA)
With output clamping diodes
Driving available with CMOS IC output of 6-16V or with TTL output
Wide operating temperature range (Ta = –20 to +75 C)
Output current-sourcing type
Symbol
opr
stg
CEO
S
I
R
d
S
#
#
(pin 8) and GND (pin 9) are used commonly among
S
is 50V maximum.
Collector-emitter voltage
Supply voltage
Input voltage
Output current
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Parameter
CEO
(Unless otherwise noted, Ta = –20 ~ +75 C)
50V)
Output, L
Current per circuit output, H
Ta = 25 C, when mounted on board
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
Conditions
PIN CONFIGURATION
CIRCUIT DIAGRAM
INPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
INPUT
3K
The seven circuits share the V
IN1
IN2
IN3
IN4
IN5
IN6
IN7
V
Package type 16P2N-A
20K
S
1.5K
1
2
3
4
5
6
7
8
7.2K
M63800FP
–55 ~ +125
–0.5 ~ +50
–0.5 ~ +10
–20 ~ +75
Ratings
16
15
14
13
12
11
10
9
–500
–500
1.00
50
50
S
3K
and GND.
GND
O1
O2
O3
O4
O5
O6
O7
OUTPUT
Unit :
OUTPUT
GND
V
Aug. 1999
S
Unit
mA
mA
W
V
V
V
V
C
C

Related parts for M63800FP

M63800FP Summary of contents

Page 1

... The input has resistance and a maximum of 10V can be applied. The output current is 500mA maximum. Supply voltage V is 50V maximum. S The M63800FP is enclosed in a molded small flat package, enabling space-saving design. ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted –20 ~ +75 C) Symbol Parameter ...

Page 2

... 10V 50V (all input –350mA 50V R Test conditions C = 15pF (note 1) L TIMING DIAGRAM 50% INPUT OUTPUT C L OUTPUT = 10V M63800FP Unit Limits + min typ max — — 100 — 1.6 2.4 — 1.45 2.0 — 0.6 1.0 — 2.9 5.0 — 5.6 15.0 — ...

Page 3

... I M63800FP Output Saturation Voltage Output Current Characteristics V = 10V 2. 75° 25° –20°C 0.5 1.0 1.5 2.0 2.5 (sat) (V) CE •Ta = 75°C ...

Page 4

... Input Characteristics 1 20V 75°C 0 25° –20°C 0.6 0.4 0 Input voltage V (V) I MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> Input Characteristics 20V 75° 25° –20° Input voltage V M63800FP (V) I Aug. 1999 ...

Page 5

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. ...

Related keywords