M5M5408BFP-55H Renesas Electronics Corporation., M5M5408BFP-55H Datasheet
M5M5408BFP-55H
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M5M5408BFP-55H Summary of contents
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To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April ...
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... Outline 32P3Y-J (RT) MITSUBISHI LSIs M5M5408BFP: 32 pin 525 mil SOP M5M5408BTP/RT: 32 pin 400 mil TSOP(ll) Stand-by c urrent Icc , Vcc=3.0V (PD) Limit s (max.) 25°C 70°C 85°C 1µA 15µA --- 1µA 15µA 30µA Pin Function A18 ...
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... Feb.12, 2002 M5M5408BFP/TP/RT FUNCTION The M5M5408BFP,TP,RT is organized as 524,288-words by 8-bit. These dev ices operate on a single +5.0V power supply , and are directly TTL compatible to both input and output. Its f ully s t atic circuit needs no clocks and no ref resh, and makes it usef ul. ...
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... Feb.12, 2002 M5M5408BFP/TP/RT ABSOLUTE MAXIMUM RATINGS Symbol Parameter V cc Supply v oltage Input v oltage V I Output v oltage Power dissipation d Operating T a temperature T Storage temperature stg DC ELECTRICAL CHARACTERISTICS Symbol Parameter High-lev el input v oltage Low-lev el input v oltage IL V High-level output voltage 1 ...
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... Feb.12, 2002 M5M5408BFP/TP/RT AC ELECTRICAL CHARACTERISTICS (1) TEST CONDITIONS Supply v oltage Input pulse Input rise time and f all time Ref erence lev el Output loads (2) READ CYCLE Symbol t Read cy cle time CR t (A) Address access time a t (S) Chip select access time a t (OE) Output enable access time ...
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... Feb.12, 2002 M5M5408BFP/TP/RT (4)TIMING DIAGRAMS Read cycle A 0~18 S# (Note3) OE# (Note3 "H" lev el DQ 1~8 Write cycle ( W# control mode ) A 0~18 S# (Note3) OE 1~8 4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM ( ( (OE (OE ( (S) su (Note4) t (A-WH) ...
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... Feb.12, 2002 M5M5408BFP/TP/RT Write cycle (S# control mode (Note3) DQ 1~8 Note 3: Hatching indicates the state is "don't care". Note 4: A Write occurs during the ov erlap of a low S# and a low W#. Note goes low simultaneously with or prior to S#, the output remains in the high impedance state. ...
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... Feb.12, 2002 M5M5408BFP/TP/RT POWER DOWN CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS Symbol Parameter Vcc Power down supply v oltage (PD) V Chip select input S# I (S#) Icc Power down supply c urrent (PD) (2) TIMING REQUIREMENTS Symbol Parameter t Power down set up time su (PD) Power down recov ery t ime ...
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... Feb.12, 2002 M5M5408BFP/TP/RT Revision History Revision No. History K0.1e The first edition K0.2e 1) Icc3 limit revised 2) Icc(PD) limit revised 3) Icc1,Icc2 conditions revised K0.3e 1) Vcc Level in the Block Diagram rev ised 2) Icc3 limit (typ) revised K1.0e The first product version K1.1e Product lineup revised 2.0e 1) Product lineup revised 2) Symbol notations revised: S -> ...
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Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to ...