IRF7342TR International Rectifier Corp., IRF7342TR Datasheet

IRF7342TR

Manufacturer Part Number

IRF7342TR

Description

Manufacturer

International Rectifier Corp.

Datasheet

1.IRF7342TR.pdf (7 pages)

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Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

dv/dt

GSM

@ T

Generation V Technology

Ultra Low On-Resistance

Dual P-Channel Mosfet

Surface Mount

Available in Tape & Reel

Dynamic dv/dt Rating

Fast Switching

STG

= 25°C

= 70°C

= 25°C

= 70°C

Maximum Junction-to-Ambient

Drain- Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Gate-to-Source Voltage Single Pulse tp<10µs

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Parameter

@ 10V

G 2

G 1

S 1

T op V iew

Typ.

–––

HEXFET

-55 to + 150

Max.

0.016

D 1

D 2

-3.4

-2.7

± 20

114

D 2

-55

-27

2.0

1.3

5.0

S O -8

IRF7342

DS(on)

Power MOSFET

Max.

62.5

DSS

= 0.105

= -55V

PD -91859

Units

W/°C

°C/W

V/ns

°C

2/24/99

Related parts for IRF7342TR

IRF7342TR Summary of contents

Page 1

Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. ...

Page 2

IRF7342 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRF7342TR International Rectifier Corp., IRF7342TR Datasheet

IRF7342TR

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IRF7342TR Summary of contents

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