M5M5V5636GP-16I Renesas Electronics Corporation., M5M5V5636GP-16I Datasheet
M5M5V5636GP-16I
Related parts for M5M5V5636GP-16I
M5M5V5636GP-16I Summary of contents
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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
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To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April ...
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... Notice: This is not final specification. Some parametric limits are subject to change. DESCRIPTION The M5M5V5636GP is a family of 18M bit synchronous SRAMs organized as 524288-words by 36-bit designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Mitsubishi's SRAMs are fabricated with high performance, low power CMOS technology, providing greater reliability ...
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... VSS 90 VDD 91 E3# 92 BWa# 93 BWb# 94 BWc# 95 BWd E1 100 Note1. MCH means "Must Connect High". MCH should be connected to HIGH. 2/17 M5M5V5636GP –16I,13I 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM M5M5V5636GP MITSUBISHI LSIs 50 A10 49 A11 48 A12 47 A13 46 A14 45 A15 44 A16 VDD ...
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... DATA COHERENCY CONTROL LOGIC READ LOGIC V SS MITSUBISHI LSIs M5M5V5636GP –16I,13I BYTE1 WRITE DRIVERS BYTE2 256Kx36 WRITE DRIVERS MEMORY BYTE3 ARRAY WRITE DRIVERS BYTE4 WRITE DRIVERS INPUT INPUT 36 REGISTER1 REGISTER0 M5M5V5636GPI REV.0.1 DQa DQPa DQb DQPb DQc DQPc DQd DQPd Preliminary ...
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... HIGH or NC, an interleaved burst occurs. When this pin is LOW, a linear burst occurs, and input leak current to this pin. Core Power Supply Core Ground I/O buffer Power supply I/O buffer Ground These pins should be connected to HIGH These pins are not internally connected and may be connected to ground. MITSUBISHI LSIs M5M5V5636GP –16I,13I Function Preliminary M5M5V5636GPI REV.0.1 ...
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... Write Cycle, Begin Burst D External Write Cycle, Continue Burst D Next NOP/Write Abort, Begin Burst High-Z None Write Abort, Continue Burst High-Z Next Ignore Clock edge, Stall - Current Snooze Mode High-Z None M5M5V5636GPI REV.0 Preliminary ...
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... Read Begin Burst Read Continue Burst Input Command Code f Transition Current State MITSUBISHI LSIs M5M5V5636GP –16I,13I Write Begin Burst Write Continue Burst Next State M5M5V5636GPI REV.0.1 Preliminary ...
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... Write Byte b H Write Byte c H Write Byte d L Write All Bytes L Write Abort/NOP H Conditions With respect Industrial Temperature +0.5V in case of DC. DDQ MITSUBISHI LSIs M5M5V5636GP –16I,13I Ratings -1.0*~4.6 -1.0*~4.6 -1.0~V +1.0** DDQ -1.0~V +1.0** DDQ 1180 -40~85 -65~150 Preliminary M5M5V5636GPI REV.0.1 Unit °C °C ...
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... DDQ +1.0V in case of AC(Pulse width 2ns). DDQ MITSUBISHI LSIs M5M5V5636GP –16I,13I Limits Min Max 3.135 3.465 3.135 3.465 2.375 2.625 2.0 V +0.3* DDQ 1.7 0.8 -0.3* 0.7 V -0.4 DDQ 0.4 10 100 100 10 380 350 160 130 30 30 130 120 Preliminary M5M5V5636GPI REV.0.1 Unit µA µ ...
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... DC ELECTRICAL CHARACTERISTICS table. OH MITSUBISHI LSIs M5M5V5636GP –16I,13I Limits Min Typ Limits Min Typ 28.18 20.33 6. DDQ toff ton Vh-(0.2(Vh-Vz)) Vz+(0.2(Vh-Vz)) (toff) Vz 0.2(Vz-Vl) Vz-(0.2(Vz-Vl)) Fig.3 Tri-State measurement /2 on the output waveform. DDQ 1V/ns. faster than or equal to M5M5V5636GPI REV.0.1 Unit Max Unit Max °C/W °C/W °C/W (ton) 1V/ns. Preliminary ...
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... ZZ=LOW fix. are sampled. MITSUBISHI LSIs M5M5V5636GP –16I,13I Limits 167MHz 133MHz -16 -13 Min Max Min Max 6.0 7.5 2.7 3.0 2.7 3.0 3.8 4.2 1.5 1.5 1.5 1.5 1.5 3.8 1.5 4.2 3.8 4.2 0.0 0.0 3.8 4.2 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 2*t 2*t KHKH KHKH 2*t 2*t KHKH KHKH Preliminary M5M5V5636GPI REV.0.1 Unit ...
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... Note31.ZZ is fixed LOW . 11/17 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM t KLKH Q(A1) Q(A2) Q(A2+1) Q(A2+2) t GHQZ t KHQX Stall Burst Read Burst Read Burst Read A2+1 A2+2 A2+3 A2 MITSUBISHI LSIs M5M5V5636GP –16I,13I A3 t GLQV Q(A2+3) Q(A2) t KHQZ t GLQX1 Deselect Continue Read A3 Burst Read Burst Read Deselect A3+1 DON'T CARE M5M5V5636GPI REV.0.1 Q(A3) Q(A3+1) Burst Read A3+2 A3+3 UNDEFINED Preliminary ...
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... Note33. E# represents three signals. When E# is LOW, it represents E1# is LOW HIGH and E3# is LOW. Note34.ZZ is fixed LOW. 12/17 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM t KLKH A3 t KHDX D(A1) D(A2) D(A2+1) D(A2+3) NOP Burst Write Write A2 Write A3 A2+1 A2+3 MITSUBISHI LSIs M5M5V5636GP –16I,13I A4 D(A2) D(A3) D(A4) Write A4 NOP Burst Write Stall Burst Write A4+1 A4+2 DON'T CARE M5M5V5636GPI REV.0.1 D(A4+1) Burst Write A4+3 UNDEFINED Preliminary ...
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... Note36. E# represents three signals. When E# is LOW, it represents E1# is LOW HIGH and E3# is LOW. Note37.ZZ is fixed LOW. 13/17 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM t KLKH DVKH t KHDX Q(A1) D(A2) Q(A2) D(A3) D(A3+1) t KHQV Write A3 Burst Write Read A3 Burst Read A3+1 A3+1 MITSUBISHI LSIs M5M5V5636GP –16I,13I A4 A5 Q(A3) Q(A3+1) D(A4) Deselect Write A4 Stall Read A5 Burst Read A5+1 DON'T CARE M5M5V5636GPI REV.0.1 Q(A5) Burst Read A5+2 UNDEFINED Preliminary ...
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... MODE TIMING CLK t ZZS ZZ All Inputs (except ZZ) Q 14/17 M5M5V5636GP –16I,13I 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM t ZZREC DESELECT or READ only Snooze Mode MITSUBISHI LSIs Preliminary M5M5V5636GPI REV.0.1 ...
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... Nom Note38. Dimensions *1 and *2 don't include mold flash. Note39 Dimension *3 doesn't include trim off set. Note40.All dimensions in millimeters. 15/17 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM 0.32+0.06 -0.07 0.1 0.13 M MITSUBISHI LSIs M5M5V5636GP –16I,13I 0.125+0.05 -0.02 0.5±0.15 Detail A M5M5V5636GPI REV.0.1 0°~7° Preliminary ...
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... DC ELECTRICAL CHARACTERISTICS Changed ILI limit from 10uA to 100uA 0.1 (Input Leakage Current of ZZ and LBO#) Changed Icc3 and Icc4 limit from 20mA to 30mA (Standby Current) 16/17 MITSUBISHI LSIs M5M5V5636GP –16I,13I 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM Date September 20, 2002 January 31, 2003 M5M5V5636GPI REV.0.1 Preliminary Preliminary Preliminary ...
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... Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. 17/17 M5M5V5636GP –16I,13I 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM M5M5V5636GPI REV.0.1 MITSUBISHI LSIs Preliminary ...