AM29F400BB-70FC Advanced Micro Devices, AM29F400BB-70FC Datasheet

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AM29F400BB-70FC

Manufacturer Part Number
AM29F400BB-70FC
Description
4 megabit CMOS 5.0 volt-only boot sector flash memory
Manufacturer
Advanced Micro Devices
Datasheet
Am29F400B
4 Megabit (512 K x 8-Bit/256 K x 16-Bit)
CMOS 5.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
Single power supply operation
— 5.0 volt-only operation for read, erase, and
— Minimizes system level requirements
Manufactured on 0.35 µm process technology
— Compatible with 0.5 µm Am29F400 device
High performance
— Access times as fast as 55 ns
Low power consumption (typical values at 5
MHz)
— 1 µA standby mode current
— 20 mA read current (byte mode)
— 28 mA read current (word mode)
— 30 mA program/erase current
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
— One 8 Kword, two 4 Kword, one 16 Kword, and
— Supports full chip erase
— Sector Protection features:
program operations
seven 64 Kbyte sectors (byte mode)
seven 32 Kword sectors (word mode)
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
PRELIMINARY
Top or bottom boot block configurations
available
Embedded Algorithms
— Embedded Erase algorithm automatically
— Embedded Program algorithm automatically
Minimum 1,000,000 program/erase cycles per
sector guaranteed
Package option
— 48-pin TSOP
— 44-pin SO
Compatibility with JEDEC standards
— Pinout and software compatible with single-
— Superior inadvertent write protection
Data# Polling and toggle bits
— Provides a software method of detecting
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
preprograms and erases the entire chip or any
combination of designated sectors
writes and verifies data at specified addresses
power-supply Flash
program or erase operation completion
program or erase cycle completion
or program data to, a sector that is not being
erased, then resumes the erase operation
array data
Publication# 21505
Issue Date: April 1998
Rev: C Amendment/+2

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AM29F400BB-70FC Summary of contents

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PRELIMINARY Am29F400B 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements Manufactured ...

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GENERAL DESCRIPTION The Am29F400B Mbit, 5.0 volt-only Flash memory organized as 524,288 bytes or 262,144 words. The device is offered in 44-pin SO and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) ...

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PRODUCT SELECTOR GUIDE Family Part Number V = 5.0 V ± Speed Option V = 5.0 V ± 10% CC Max access time ACC Max CE# access time Max OE# access ...

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CONNECTION DIAGRAMS A15 1 A14 2 A13 3 A12 4 A11 5 A10 WE# 11 RESET RY/BY A17 ...

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CONNECTION DIAGRAMS NC RY/BY# A17 CE OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 PIN CONFIGURATION A0–A17 = 18 addresses DQ0–DQ14 = 15 data inputs/outputs DQ15/A-1 = DQ15 (data ...

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... EC, EI, FC, FI, SC, SI Am29F400BB-55 Am29F400BT-60, Am29F400BB-60 Am29F400BT-70, Am29F400BB-70 EC, EI, EE, Am29F400BT-90, FC, FI, FE, Am29F400BB-90 SC, SI, SE Am29F400BT-120, Am29F400BB-120 Am29F400BT-150, Am29F400BB-150 OPTIONAL PROCESSING Blank = Standard Processing B = Burn-in (Contact an AMD representative for more information) TEMPERATURE RANGE C = Commercial (0°C to +70° Industrial (– ...

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DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register it- self does not occupy any addressable memory loca- tion. The register is composed ...

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After the system writes the autoselect command se- quence, the device enters the autoselect mode. The system can then read autoselect codes from the inter- nal register (which is separate from the memory array) on DQ7–DQ0. Standard read cycle timings ...

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... SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 Table 3. Am29F400BB Bottom Boot Block Sector Address Table Sector A17 A16 A15 SA0 SA1 SA2 SA3 SA4 SA5 SA6 0 1 ...

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Table 4. Am29F400B Autoselect Codes (High Voltage Method) Description Mode CE# Manufacturer ID: AMD L Device ID: Word L Am29F400B Byte L (Top Boot Block) Device ID: Word L Am29F400B Byte L (Bottom Boot Block) Sector Protection Verification L L ...

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V power-down transitions, or from system noise. Low V Write Inhibit CC When V is less than V , the device does not ac- CC LKO cept any write cycles. This protects data during V ...

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A read cycle at address XX00h or retrieves the manu- facturer code. A read cycle at address XX01h in word mode (or 02h in byte mode) returns the device code. A read ...

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The system can determine the status of the erase op- eration by using DQ7, DQ6, DQ2, or RY/BY#. See “Write Operation Status” for information on these sta- tus bits. When the Embedded Erase algorithm is com- plete, the device returns ...

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Erase Suspend mode, and is ready for another valid operation. See “Autoselect Command Sequence” for more information. The system must write the Erase Resume command (address bits are “don’t care”) ...

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Table 5. Am29F400B Command Definitions Command Sequence (Note 1) Read (Note 6) 1 Reset (Note 7) 1 Word Manufacturer ID 4 Byte Word Device ID, 4 Top Boot Block Byte Word Device ID, 4 Bottom Boot Block Byte Word Sector ...

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WRITE OPERATION STATUS The device provides several bits to determine the sta- tus of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7, and RY/BY#. Table 6 and the following subsections de- scribe the functions of these bits. DQ7, RY/BY#, and ...

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RY/BY#: Ready/Busy# The RY/BY dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since ...

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The remaining scenario is that the system initially de- termines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, de- termining the ...

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Operation Embedded Program Algorithm Standard Mode Embedded Erase Algorithm Reading within Erase Suspended Sector Erase Suspend Reading within Non-Erase Mode Suspended Sector Erase-Suspend-Program Notes: 1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the ...

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ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . – +150 C Ambient Temperature with Power Applied ...

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DC CHARACTERISTICS TTL/NMOS Compatible Parameter Description I Input Load Current LI A9, OE#, RESET# Input Load I LIT Current I Output Leakage Current LO V Active Read Current CC I CC1 (Note 1) V Active Write Current CC I CC2 ...

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DC CHARACTERISTICS CMOS Compatible Parameter Description I Input Load Current LI A9, OE#, RESET# I LIT Input Load Current I Output Leakage Current LO V Active Read Current CC I CC1 (Note 1) V Active Write Current CC I CC2 ...

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TEST CONDITIONS Device Under Test C L 6.2 k Note: Diodes are IN3064 or equivalent. Figure 8. Test Setup KEY TO SWITCHING WAVEFORMS WAVEFORM Don’t Care, Any Change Permitted ...

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AC CHARACTERISTICS Read Operations Parameter JEDEC Std Description t t Read Cycle Time (Note 1) AVAV Address to Output Delay AVQV ACC t t Chip Enable to Output Delay ELQV Output Enable to Output ...

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AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std Description RESET# Pin Low (During Embedded t READY Algorithms) to Read or Write (See Note) RESET# Pin Low (NOT During Embedded t READY Algorithms) to Read or Write (See Note) t RESET# ...

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AC CHARACTERISTICS Word/Byte Configuration (BYTE#) Parameter JEDEC Std. Description t t CE# to BYTE# Switching Low or High ELFL/ ELFH t BYTE# Switching Low to Output HIGH Z FLQZ t BYTE# Switching High to Output Active FHQV CE# OE# BYTE# ...

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AC CHARACTERISTICS Erase/Program Operations Parameter JEDEC Std. Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVWL Address Hold Time WLAX Data Setup Time DVWH ...

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AC CHARACTERISTICS Program Command Sequence (last two cycles Addresses 555h CE# t GHWL OE# WE Data RY/BY# t VCS V CC Notes program address program data Illustration shows device ...

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AC CHARACTERISTICS Erase Command Sequence (last two cycles Addresses 2AAh CE# t GHWL OE# WE Data RY/BY# t VCS V CC Notes sector address (for Sector Erase Valid Address for reading ...

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AC CHARACTERISTICS t RC Addresses VA t ACC OE# t OEH WE# DQ7 DQ0–DQ6 t BUSY RY/BY# Note Valid address. Illustration shows first status cycle after command sequence, last status read ...

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AC CHARACTERISTICS Enter Erase Embedded Suspend Erasing Erase Erase Suspend WE# DQ6 DQ2 Note: The system may use either CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an erase-suspended sector. Temporary ...

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AC CHARACTERISTICS Alternate CE# Controlled Erase/Program Operations Parameter JEDEC Std. Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVEL Address Hold Time ELAX Data Setup Time DVEH ...

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AC CHARACTERISTICS 555 for program 2AA for erase Addresses WE# OE# CE Data t RH RESET# RY/BY# Notes Program Address Program Data Sector Address, DQ7# = Complement ...

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ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Chip Erase Time Byte Programming Time Word Programming Time Byte Mode Chip Programming Time (Note 3) Word Mode Notes: 1. Typical program and erase times assume the following conditions 5.0 ...

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PHYSICAL DIMENSIONS TS 048 48-Pin Standard Thin Small Outline Package (measured in millimeters) Pin 1 I. 1.20 MAX 0.25MM (0.0098") BSC TSR048 48-Pin Reverse Thin Small Outline Package (measured in millimeters) Pin 1 I. 1.20 MAX ...

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PHYSICAL DIMENSIONS SO 044 44-Pin Small Outline Package (measured in millimeters 1.27 NOM. TOP VIEW 28.00 28.40 2.17 2.45 0.35 0.50 SIDE VIEW 13.10 15.70 ...

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... Trademarks Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. ...

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