AM29LV116DT-120EI Advanced Micro Devices, AM29LV116DT-120EI Datasheet

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AM29LV116DT-120EI

Manufacturer Part Number
AM29LV116DT-120EI
Description
Manufacturer
Advanced Micro Devices
Datasheet
Am29LV116D
Data Sheet
July 2003
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that orig-
inally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appropriate,
and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order
these products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Publication Number 21359 Revision E
Amendment +1 Issue Date November 7, 2000

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AM29LV116DT-120EI Summary of contents

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Am29LV116D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that orig- inally developed the specification, ...

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Am29LV116D 16 Megabit ( 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS Single power supply operation — 2.7 to 3.6 volt read and write operations for battery-powered applications Manufactured on 0.23 µm process technology — Compatible ...

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GENERAL DESCRIPTION The Am29LV116D Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes. The device is offered in a 40-pin TSOP package. The byte-wide (x8) data appears on DQ7–DQ0. All read, program, and erase operations are accomplished ...

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... Program and Erase Operation Status ...................................... 9 Standby Mode .......................................................................... 9 Automatic Sleep Mode ............................................................. 9 RESET#: Hardware Reset Pin ................................................. 9 Output Disable Mode ................................................................ 9 Table 2. Am29LV116DT Top Boot Sector Address Table ..............10 Table 3. Am29LV116DB Bottom Boot Sector Address Table .........11 Autoselect Mode ..................................................................... 12 Table 4. Am29LV116D Autoselect Codes (High Voltage Method) ..12 Sector Protection/Unprotection ............................................... 12 Temporary Sector Unprotect ...

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PRODUCT SELECTOR GUIDE Family Part Number Speed Options V = 2.7–3 Max access time ACC Max CE# access time Max OE# access time Note: See “AC Characteristics” ...

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CONNECTION DIAGRAMS A16 1 A15 2 A14 3 A13 4 A12 5 A11 WE# 9 RESET RY/BY# 12 A18 ...

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PIN CONFIGURATION A0–A20 = 21 addresses DQ0–DQ7 = 8 data inputs/outputs CE# = Chip enable OE# = Output enable WE# = Write enable RESET# = Hardware reset pin, active low RY/BY# = Ready/Busy output V = 3.0 volt-only single power ...

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... E C DEVICE NUMBER/DESCRIPTION Am29LV116D 16 Megabit ( 8-Bit) CMOS Flash Memory 3.0 Volt-only Read, Program and Erase Valid Combinations Am29LV116DT-70, Am29LV116DB-70 Am29LV116DT-90, EC, EI, FC, FI Am29LV116DB-90 Am29LV116DT-120, Am29LV116DB-120 TEMPERATURE RANGE C = Commercial (0°C to +70° Industrial (– +85 C) PACKAGE TYPE E = 40-Pin Thin Small Outline Package (TSOP) ...

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DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register it- self does not occupy any addressable memory loca- tion. The register is composed ...

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Refer to the Autoselect Mode and Autoselect Command Sequence sections for more information the DC Characteristics table represents the ac- CC2 tive current specification for the write mode. The “AC Characteristics” section contains timing specification tables and ...

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... Table 2. Am29LV116DT Top Boot Sector Address Table Sector A20 A19 A18 SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 ...

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Table 3. Am29LV116DB Bottom Boot Sector Address Table Sector A20 A19 A18 A17 SA0 SA1 SA2 SA3 SA4 SA5 0 ...

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Autoselect Mode The autoselect mode provides manufacturer and de- vice identification, and sector protection verification, through identifier codes output on DQ7–DQ0. This mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding ...

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START PLSCNT = 1 RESET Wait First Write Temporary Sector Cycle = 60h? Unprotect Mode Yes Set up sector address Sector Protect: Write 60h to sector address with ...

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START RESET (Note 1) Perform Erase or Program Operations RESET Temporary Sector Unprotect Completed (Note 2) Notes: 1. All protected sectors unprotected. 2. All previously protected sectors are protected once again. Figure 2. Temporary Sector Unprotect ...

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Table 5. CFI Query Identification String Addresses Data 10h 51h 11h 52h Query Unique ASCII string “QRY” 12h 59h 13h 02h Primary OEM Command Set 14h 00h 15h 40h Address for Primary Extended Table 16h 00h 17h 00h Alternate OEM ...

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Addresses Data 27h 15h 28h 00h 29h 00h 2Ah 00h 2Bh 00h 2Ch 04h 2Dh 00h 2Eh 00h 2Fh 40h 30h 00h 31h 01h 32h 00h 33h 20h 34h 00h 35h 00h 36h 00h 37h 80h 38h 00h 39h 1Eh ...

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COMMAND DEFINITIONS Writing specific address and data commands or se- quences into the command register initiates device op- erations. Table 9 defines the valid register command sequences. Writing incorrect address and data val- ues or writing them in the improper ...

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Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from a “0” back to a “1”. Attempting ...

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The system can determine the status of the erase op- eration by using DQ7, DQ6, DQ2, or RY/BY#. See “Write Operation Status” for information on these sta- tus bits. When the Embedded Erase algorithm is com- plete, the device returns ...

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Erase Suspend mode, and is ready for another valid operation. See “Autoselect Command Sequence” for more information. The system must write the Erase Resume command (address bits are “don’t care”) ...

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Command Definitions Table 9. Am29LV116D Command Definitions Command Sequence First (Note 1) Addr Read (Note Reset (Note 6) 1 XXX Manufacturer ID 4 555 Device ID, Top Boot Block 4 555 Device ID, Bottom Boot Block Sector ...

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WRITE OPERATION STATUS The device provides several bits to determine the sta- tus of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7, and RY/BY#. Table 10 and the following subsections describe the functions of these bits. DQ7, RY/BY#, and DQ6 ...

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RY/BY#: Ready/Busy# The RY/BY dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since ...

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The remaining scenario is that the system initially de- termines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the ...

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Operation Embedded Program Algorithm Standard Mode Embedded Erase Algorithm Reading within Erase Suspended Sector Erase Suspend Reading within Non-Erase Mode Suspended Sector Erase-Suspend-Program Notes: 1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the ...

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ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . – +150 C Ambient Temperature with Power Applied ...

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DC CHARACTERISTICS CMOS Compatible Parameter Description I Input Load Current Input Load Current LIT I Output Leakage Current LO V Active Read Current CC I CC1 (Notes Active Write Current CC I CC2 (Notes ...

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DC CHARACTERISTICS (Continued) Zero Power Flash 500 1000 Note: Addresses are switching at 1 MHz Figure 9. I Current vs. Time (Showing Active and Automatic Sleep Currents) CC1 ...

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TEST CONDITIONS Device Under Test C L 6.2 k Note: Diodes are IN3064 or equivalent Figure 11. Test Setup Key to Switching Waveforms WAVEFORM Don’t Care, Any Change Permitted 3.0 V 1.5 V Input 0.0 V Figure 12. Input Waveforms ...

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AC CHARACTERISTICS Read Operations Parameter JEDEC Std Description t t Read Cycle Time (Note 1) AVAV Address to Output Delay AVQV ACC t t Chip Enable to Output Delay ELQV Output Enable to Output ...

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AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std Description RESET# Pin Low (During Embedded Algorithms) t READY to Read or Write (See Note) RESET# Pin Low (NOT During Embedded t READY Algorithms) to Read or Write (See Note) t RESET# ...

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AC CHARACTERISTICS Erase/Program Operations Parameter JEDEC Std Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVWL Address Hold Time WLAX Data Setup Time DVWH ...

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AC CHARACTERISTICS Program Command Sequence (last two cycles Addresses 555h CE# OE# WE Data RY/BY# t VCS V CC Note program address program data, D Erase Command Sequence (last two cycles) t ...

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AC CHARACTERISTICS t RC Addresses VA t ACC OE# t OEH WE# DQ7 DQ0–DQ6 t BUSY RY/BY# Note Valid address. Illustration shows first status cycle after command sequence, last status read ...

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AC CHARACTERISTICS Enter Erase Embedded Suspend Erasing Erase Erase Suspend WE# DQ6 DQ2 Note: The system can use OE# or CE# to toggle DQ2/DQ6. DQ2 toggles only when read at an address within an erase-suspended sector. Temporary Sector Unprotect Parameter ...

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AC CHARACTERISTICS RESET# SA, A6, A1, A0 Sector Protect/Unprotect Data 60h 1 µs CE# WE# OE# Note: For sector protect For sector unprotect ...

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AC CHARACTERISTICS Alternate CE# Controlled Erase/Program Operations Parameter JEDEC Std Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVEL Address Hold Time ELAX Data Setup Time DVEH ...

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AC CHARACTERISTICS 555 for program 2AA for erase Addresses WE# OE# CE Data t RH RESET# RY/BY# Note program address program data, DQ7# = complement of the data written to ...

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ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Chip Erase Time Byte Programming Time Chip Programming Time (Note 3) Notes: 1. Typical program and erase times assume the following conditions 3 programming typicals assume checkerboard pattern. ...

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PHYSICAL DIMENSIONS* TS 040—40-Pin Standard TSOP * For reference only. BSC is an ANSI standard for Basic Space Centering. 40 Am29LV116D Dwg rev AA; 10/99 ...

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PHYSICAL DIMENSIONS TSR040—40-Pin Reverse TSOP * For reference only. BSC is an ANSI standard for Basic Space Centering. Am29LV116D Dwg rev AA; 10/99 41 ...

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REVISION SUMMARY Revision A (October 1997) First release. Revision B (October 1997) Global Deleted SO package from data sheet. Revision C (December 1997) Alternate CE# Controlled Erase/Program Operations Changed t from 80R and 90 speed ...

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... Trademarks Copyright © 2000 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. ...

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