CY7C254-45WC Cypress Semiconductor Corporation., CY7C254-45WC Datasheet

no-image

CY7C254-45WC

Manufacturer Part Number
CY7C254-45WC
Description
Manufacturer
Cypress Semiconductor Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C254-45WC
Manufacturer:
CYP
Quantity:
2 060
Part Number:
CY7C254-45WC
Manufacturer:
CY
Quantity:
595
Part Number:
CY7C254-45WC
Manufacturer:
CYP
Quantity:
338
Company:
Part Number:
CY7C254-45WC
Quantity:
20
Features
Cypress Semiconductor Corporation
• CMOS for optimum speed/power
• Windowed for reprogrammability
• High speed
• Low power
• Super low standby power (7C251)
• EPROM technology 100% programmable
• Slim 300-mil or standard 600-mil packaging available
• 5V 10% V
• TTL-compatible I/O
• Direct replacement for bipolar PROMs
• Capable of withstanding >2001V static discharge
— 45 ns
— 550 mW (commercial)
— 660 mW (military)
— Less than 165 mW when deselected
— Fast access: 50 ns
A
A
A
A
CS
CS
CS
CS
Logic Block Diagram
A
A
A
A
A
A
A
A
A
A
13
12
11
10
9
8
7
6
5
4
3
2
1
0
1
2
3
4
DECODER
ADDRESS
ADDRESS
ADDRESS
COLUMN
CC
ROW
, commercial and military
X
Y
PROGRAMABLE
512 x 256
ARRAY
POWER-DOWN
(7C251)
MULTIPLEXER
8 x 1 OF 32
3901 North First Street
Functional Description
The
16,384-word by 8-bit CMOS PROMs. When deselected, the
CY7C251 automatically powers down into a low-power
stand-by mode. It is packaged in a 300-mil-wide package. The
7C254 is packaged in a 600-mil-wide package and does not
power down when deselected. The 7C251 and 7C254 are
available in reprogrammable packages equipped with an era-
sure window; when exposed to UV light, these PROMs are
erased and can then be reprogrammed. The memory cells uti-
lize proven EPROM floating gate technology and byte-wide
intelligent programming algorithms.
The CY7C251 and CY7C254 are plug-in replacements for bi-
polar devices and offer the advantages of lower power, supe-
rior performance, and high programming yield. The EPROM
cell requires only 12.5V for the super voltage, and low current
requirements allow for gang programming. The EPROM cells
allow each memory location to be tested 100% because each
location is written into, erased, and repeatedly exercised prior
to encapsulation. Each PROM is also tested for AC perfor-
mance to guarantee that after customer programming, the
product will meet DC and AC specification limits.
Reading is accomplished by placing all four chip selects in
their active states. The contents of the memory location ad-
dressed by the address lines (A
the output lines (O
16K x 8 Power Switched and
C251-1
CY7C251
O
O
O
O
O
O
O
O
7
6
5
4
3
2
1
0
Pin Configurations
San Jose
Reprogrammable PROM
0
November 1986 – Revised December 1992
– O
and
7
).
CY7C254
CA 95134
A
A
A
A
NC
O
O
A
A
GND
5
4
3
2
1
0
0
1
0
O
O
O
A
A
A
A
A
A
A
A
A
A
– A
9
8
7
6
5
4
3
2
1
0
0
1
2
5
6
7
8
9
10
11
12
13
14151617
DIP/Flatpack
13
4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
are
3 2 1
) will become available on
7C254
7C251
7C254
7C251
LCC
32
181920
high-performance
28
27
26
25
24
23
22
21
20
19
18
17
16
15
31
CY7C251
CY7C254
30
408-943-2600
29
28
27
26
25
24
23
22
21
CS
CS
CS
CS
V
A
A
A
A
O
O
O
O
O
CC
10
11
12
13
7
6
5
4
3
1
2
3
4
CS
CS
CS
CS
A
NC
O
O
C251-2
A
13
12
7
6
C251-3
1
2
3
4

Related parts for CY7C254-45WC

CY7C254-45WC Summary of contents

Page 1

... The memory cells uti- lize proven EPROM floating gate technology and byte-wide intelligent programming algorithms. The CY7C251 and CY7C254 are plug-in replacements for bi- polar devices and offer the advantages of lower power, supe- rior performance, and high programming yield. The EPROM cell requires only 12 ...

Page 2

... OUT V = Max OUT V = Max OUT V = Max OUT 2 CY7C251 CY7C254 7C251-65, 7C254- 100 100 120 120 Ambient Temperature + 10% – + 10% – +125 C 5V 10% 7C251-45,55,65 7C254-45,55,65 Min ...

Page 3

... C251-6 [2, 4] 7C251-45 7C254-45 Min. [6] Only) 1 [6] Only [ 50 HZCS , CS and CS only CY7C251 CY7C254 Max. Unit 10 10 ALL INPUT PULSES 3.0V 90% 90% 10% GND 10 7C251-55 7C251-65 7C254-55 7C254-65 Max. Min. Max. Min. Max ...

Page 4

... A 23 PGM VFY C251-8 Figure 1. Programmable Pinout 4 CY7C251 CY7C254 [ PGM High High High High ...

Page 5

... OUTPUTVOLTAGE (V) OUTPUT SINK CURRENT vs. OUTPUT VOLTAGE 175 150 125 100 75 V =5. = 0.0 1.0 2.0 3.0 4.0 OUTPUT VOLTAGE (V) 5 CY7C251 CY7C254 NORMALIZED ACCESS TIME vs. SUPPLY VOLTAGE 1.2 1.0 0.8 0 0.4 4.0 4.5 5.0 5.5 6.0 SUPPLY VOLTAGE (V) TYPICAL ACCESS TIME CHANGE vs. OUTPUT LOADING 30.0 25.0 20.0 15.0 10.0 V =4. 0.0 0 200 ...

Page 6

... CY7C254–45WMB 55 CY7C254–55PC CY7C254–55WC CY7C254–55DMB CY7C254–55QMB CY7C254–55WMB 65 CY7C254–65PC CY7C254–65WC CY7C254–65DMB CY7C254–65QMB CY7C254–65WMB Note: 9. Most of these products are available in industrial temperature range. Contact a Cypress representative for specifications and product availability. Name Package Type ...

Page 7

... CS and Document #: 38–00056–G 7 CY7C251 CY7C254 Cypress Number CY7C251–65WMB CY7C251–65TMB CY7C251–65QMB CY7C251–55WMB CY7C251–55TMB CY7C251–55QMB CY7C254–65WMB CY7C254–65TMB CY7C254–65QMB CY7C254–55WMB CY7C254–55TMB CY7C254–55QMB only). 4 ...

Page 8

... CerDIP D16 MIL–STD–1835 D–10 Config.A 32-Pin Rectangular Leadless Chip Carrier L55 MIL–STD–1835 C–12 28-Lead (300-Mil) CerDIP D22 MIL–STD–1835 D– 15 Config. A 32-Pin Windowed Rectangular Leadless Chip Carrier Q55 MIL–STD–1835 C–12 8 CY7C251 CY7C254 ...

Page 9

... Package Diagrams (continued) 28-Lead (600-Mil) Molded DIP P15 28-Lead (300-Mil) Molded DIP P21 9 CY7C251 CY7C254 ...

Page 10

... Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. 28-Lead (600-Mil) Windowed CerDIP W16 MIL–STD–1835 D–10 Config. A 28-Lead (300-Mil) Windowed CerDIP W22 MIL–STD–1835 D–15 Config. A CY7C251 CY7C254 ...

Related keywords