M40SZ100W STMicroelectronics, M40SZ100W Datasheet

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M40SZ100W

Manufacturer Part Number
M40SZ100W
Description
ZEROPOWER Supervisor
Manufacturer
STMicroelectronics
Datasheet

Specifications of M40SZ100W

M40sz100y
VCC= 4.5 to 5.5V; 4.20V ≤ VPFD≤ 4.50
M40sz100w
VCC= 2.7 to 3.6V; 2.55V ≤ VPFD≤ 2.70 V

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M40SZ100W
Manufacturer:
ST
0
Part Number:
M40SZ100WMQ6
Manufacturer:
ST
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Part Number:
M40SZ100WMQ6E
Manufacturer:
ST
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Part Number:
M40SZ100WMQ6F
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ST
Quantity:
20 000
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Part Number:
M40SZ100WMQ6F
Quantity:
5 000
Features
a. Contact local ST sales office for availability.
November 2007
Convert low power SRAMs into NVRAMs
5V or 3V operating voltage
Precision power monitoring and power
switching circuitry
Automatic write-protection when V
tolerance
Choice of supply voltages and power-fail
deselect voltages:
– M40SZ100Y: V
– M40SZ100W: V
Reset output (RST) for power on reset
1.25V reference (for PFI/PFO)
Less than 10ns chip enable access
propagation delay (at 5V)
Optional packaging includes a 28-lead SOIC
and SNAPHAT
28-lead SOIC package provides direct
connection for a SNAPHAT top which contains
the battery
Battery low pin (BL)
RoHS compliant
4.20V
2.55V
Lead-free second level interconnect
(a)
V
V
PFD
PFD
®
top (to be ordered separately)
CC
4.50V
CC
2.70V
= 4.5 to 5.5V;
= 2.7 to 3.6V;
CC
5V or 3V NVRAM supervisor for LPSRAM
is out-of-
Rev 2
SNAPHAT (SH) battery
28
SOH28 (MH)
SO16 (MQ)
16
M40SZ100W
1
1
M40SZ100Y
(a)
www.st.com
1/25
1

Related parts for M40SZ100W

M40SZ100W Summary of contents

Page 1

... Automatic write-protection when V tolerance ■ Choice of supply voltages and power-fail deselect voltages: – M40SZ100Y 4.5 to 5.5V; CC 4.20V V 4.50V PFD – M40SZ100W 2.7 to 3.6V; CC 2.55V V 2.70V PFD ■ Reset output (RST) for power on reset ■ 1.25V reference (for PFI/PFO) ■ Less than 10ns chip enable access propagation delay (at 5V) ■ ...

Page 2

Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

List of tables Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 4

List of figures Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 5

... SNAPHAT (or external battery for the CC ® housing containing the battery. The SNAPHAT housing has gold Table 13 on page BAT E M40SZ100Y PFI M40SZ100W RSTIN forced CON 23). (1) V OUT BL E CON PFO ...

Page 6

... Supply voltage output Supply voltage Back-up supply voltage Power fail input Power fail output Ground Not connected internally RST OUT M40SZ100Y 5 M40SZ100W 12 PFI RSTIN PFO BAT CON AI03935 ...

Page 7

... Open drain output OUT PFI M40SZ100Y M40SZ100W RSTIN RST PFO CON AI03934 COMPARE 2.5V COMPARE ...

Page 8

... Figure 5. Hardware hookup Regulator Unregulated V IN Voltage From Microprocessor User supplied for the 16-pin package 8/25 3.0V, 3. OUT 0.1 F M40SZ100Y M40SZ100W E RSTIN E CON PFI PFO V SS RST (1) V BAT 1Mb or 4Mb 0.1 F LPSRAM E To Microprocessor NMI To Microprocessor Reset To Battery Monitor Circuit ...

Page 9

Operation The M40SZ100Y/W, as shown in parallel) standard low-power SRAM. This SRAM must be configured to have the chip enable input disable all other input signals. Most slow, low-power SRAMs are configured like this, however many fast SRAMs are ...

Page 10

Caution: Take care to avoid inadvertent discharge through V attached. For a further more detailed review of lifetime calculations, please see Application Note AN1012. Figure 6. Power down timing PFD (max) V PFD V PFD (min) V ...

Page 11

... Parameter fall time CC fall time rise time CC M40SZ100Y M40SZ100W rise time = –40 to 85° 2.7 to 3.6V or 4.5 to 5.5V(except where noted may result in deselection/write protection not occurring until 200 µs after F may cause corruption of RAM data. FB tEPD VALID AI03937 ...

Page 12

Power-on reset output All microprocessors have a reset input which forces them to a known state when starting. The M40SZ100Y/W has a reset output (RST) pin which is guaranteed to be low by V (see Table 7 on page ...

Page 13

... In addition to transients that are caused by normal SRAM operation, power cycling can generate negative voltage spikes on V one volt. These negative spikes can cause data corruption in the SRAM while in battery backup mode. To protect from these voltage spikes, STMicroelectronics recommends connecting a schottky diode from V Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is recommended for surface mount ...

Page 14

Figure 9. Supply voltage protection 14/ 0.1 F DEVICE V SS AI00622 ...

Page 15

... Negative undershoots below –0.3V are not allowed on any pin while in the battery back-up mode. Caution: Do NOT wave solder SOIC to avoid damaging SNAPHAT sockets. Parameter SNAPHAT off) CC SOIC –0 M40SZ100Y M40SZ100W Value Unit – °C –55 to 125 °C 260 °C +0 – ...

Page 16

... Ambient operating temperature Load capacitance (C Input rise and fall times Input pulse voltages Input and output timing ref. voltages Figure 10. AC testing load circuit Note 100pF for M40SZ100Y and 50pF for M40SZ100W. 16/25 conditions. Designers should check that the operating conditions ) L 0.2 to 0.8V 0.3 to 0.7V ...

Page 17

... CC V > V – 0.3 OUT BAT 2.5 3.0 0.7V CC –0 –1.0mA 2 –1.0µA 2.5 2.9 OUT2 I = 3.0mA 10mA OL 0.7V CC 0.3V CC AI02568 Min Max Unit 7 10 M40SZ100W Max Min Typ Max 1 0.5 200 50 200 ±1 ±1 25 – ±1 ±1 175 100 100 100 (6) (6) 3.5 2.5 3.0 3 0 ...

Page 18

... For RST & BL pins (open drain). 18/25 M40SZ100Y (1) Test condition Min Typ 4.4 4. 5V(Y) 1.2 CC 1.225 3V(V) CC PFI rising 20 2.5 = –40 to 85° 2.7 to 3.6V or 4.5 to 5.5V(except where noted specification (3V or 5V). CC – 0.5V. CC M40SZ100W Max Min Typ Max 4.50 2.55 2.60 2.70 1.25 1.275 1.225 1.275 2.5 Unit ...

Page 19

Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a lead-free second level interconnect. The category of second Level Interconnect is marked on the package and on the inner ...

Page 20

Figure 13. SOH28 – 28-lead plastic small outline, 4-socket battery SNAPHAT, package outline B Note: Drawing is not to scale. Table 9. SOH28 – 28-lead plastic small outline, battery SNAPHAT, pack. mech. data Symbol Typ ...

Page 21

Figure 14. SH – 4-pin SNAPHAT housing for 48mAh battery, package outline Note: Drawing is not to scale. Table 10. SH – 4-pin SNAPHAT housing for 48mAh battery, package mechanical data Symbol Typ ...

Page 22

Figure 15. SH – 4-pin SNAPHAT housing for 120mAh battery, package outline Note: Drawing is not to scale. Table 11. SH – 4-pin SNAPHAT housing for 120mAh battery, package mechanical data Symbol Typ ...

Page 23

Part numbering Table 12. Ordering information scheme Example: Device type M40SZ Supply voltage and write protect voltage 100Y = V = 4.5 to 5.5V 100W = V = 2.7 to 3.6V Package MQ = SO16 ...

Page 24

... M40SZ100, M40SZ100Y, M40SZ100W, 40SZ100, 40SZ100Y, 40SZ100W, ZEROPOWER, ZEROPOWER, ZEROPOWER, ZE- ROPOWER, ZEROPOWER, ZEROPOWER, ZEROPOWER, ZEROPOWER, ZEROPOWER, ZEROPOWER, ZEROPOWER, ZE- ROPOWER, ZEROPOWER, ZEROPOWER, ZEROPOWER, SUPERVISOR, SUPERVISOR, SUPERVISOR, SUPERVISOR, SUPERVISOR, SUPERVISOR, SUPERVISOR, SUPERVISOR, SUPERVISOR, SUPERVISOR, SUPERVISOR, SUPERVISOR, SUPERVISOR, SUPERVISOR, SUPERVISOR, NVRAM, NVRAM, NVRAM, NVRAM, NVRAM, NVRAM, NVRAM, NVRAM, NVRAM, ...

Page 25

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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