M40SZ100W STMicroelectronics, M40SZ100W Datasheet
M40SZ100W
Specifications of M40SZ100W
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M40SZ100W Summary of contents
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... Automatic write-protection when V tolerance ■ Choice of supply voltages and power-fail deselect voltages: – M40SZ100Y 4.5 to 5.5V; CC 4.20V V 4.50V PFD – M40SZ100W 2.7 to 3.6V; CC 2.55V V 2.70V PFD ■ Reset output (RST) for power on reset ■ 1.25V reference (for PFI/PFO) ■ Less than 10ns chip enable access propagation delay (at 5V) ■ ...
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Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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List of tables Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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List of figures Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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... SNAPHAT (or external battery for the CC ® housing containing the battery. The SNAPHAT housing has gold Table 13 on page BAT E M40SZ100Y PFI M40SZ100W RSTIN forced CON 23). (1) V OUT BL E CON PFO ...
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... Supply voltage output Supply voltage Back-up supply voltage Power fail input Power fail output Ground Not connected internally RST OUT M40SZ100Y 5 M40SZ100W 12 PFI RSTIN PFO BAT CON AI03935 ...
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... Open drain output OUT PFI M40SZ100Y M40SZ100W RSTIN RST PFO CON AI03934 COMPARE 2.5V COMPARE ...
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... Figure 5. Hardware hookup Regulator Unregulated V IN Voltage From Microprocessor User supplied for the 16-pin package 8/25 3.0V, 3. OUT 0.1 F M40SZ100Y M40SZ100W E RSTIN E CON PFI PFO V SS RST (1) V BAT 1Mb or 4Mb 0.1 F LPSRAM E To Microprocessor NMI To Microprocessor Reset To Battery Monitor Circuit ...
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Operation The M40SZ100Y/W, as shown in parallel) standard low-power SRAM. This SRAM must be configured to have the chip enable input disable all other input signals. Most slow, low-power SRAMs are configured like this, however many fast SRAMs are ...
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Caution: Take care to avoid inadvertent discharge through V attached. For a further more detailed review of lifetime calculations, please see Application Note AN1012. Figure 6. Power down timing PFD (max) V PFD V PFD (min) V ...
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... Parameter fall time CC fall time rise time CC M40SZ100Y M40SZ100W rise time = –40 to 85° 2.7 to 3.6V or 4.5 to 5.5V(except where noted may result in deselection/write protection not occurring until 200 µs after F may cause corruption of RAM data. FB tEPD VALID AI03937 ...
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Power-on reset output All microprocessors have a reset input which forces them to a known state when starting. The M40SZ100Y/W has a reset output (RST) pin which is guaranteed to be low by V (see Table 7 on page ...
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... In addition to transients that are caused by normal SRAM operation, power cycling can generate negative voltage spikes on V one volt. These negative spikes can cause data corruption in the SRAM while in battery backup mode. To protect from these voltage spikes, STMicroelectronics recommends connecting a schottky diode from V Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is recommended for surface mount ...
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Figure 9. Supply voltage protection 14/ 0.1 F DEVICE V SS AI00622 ...
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... Negative undershoots below –0.3V are not allowed on any pin while in the battery back-up mode. Caution: Do NOT wave solder SOIC to avoid damaging SNAPHAT sockets. Parameter SNAPHAT off) CC SOIC –0 M40SZ100Y M40SZ100W Value Unit – °C –55 to 125 °C 260 °C +0 – ...
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... Ambient operating temperature Load capacitance (C Input rise and fall times Input pulse voltages Input and output timing ref. voltages Figure 10. AC testing load circuit Note 100pF for M40SZ100Y and 50pF for M40SZ100W. 16/25 conditions. Designers should check that the operating conditions ) L 0.2 to 0.8V 0.3 to 0.7V ...
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... CC V > V – 0.3 OUT BAT 2.5 3.0 0.7V CC –0 –1.0mA 2 –1.0µA 2.5 2.9 OUT2 I = 3.0mA 10mA OL 0.7V CC 0.3V CC AI02568 Min Max Unit 7 10 M40SZ100W Max Min Typ Max 1 0.5 200 50 200 ±1 ±1 25 – ±1 ±1 175 100 100 100 (6) (6) 3.5 2.5 3.0 3 0 ...
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... For RST & BL pins (open drain). 18/25 M40SZ100Y (1) Test condition Min Typ 4.4 4. 5V(Y) 1.2 CC 1.225 3V(V) CC PFI rising 20 2.5 = –40 to 85° 2.7 to 3.6V or 4.5 to 5.5V(except where noted specification (3V or 5V). CC – 0.5V. CC M40SZ100W Max Min Typ Max 4.50 2.55 2.60 2.70 1.25 1.275 1.225 1.275 2.5 Unit ...
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Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a lead-free second level interconnect. The category of second Level Interconnect is marked on the package and on the inner ...
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Figure 13. SOH28 – 28-lead plastic small outline, 4-socket battery SNAPHAT, package outline B Note: Drawing is not to scale. Table 9. SOH28 – 28-lead plastic small outline, battery SNAPHAT, pack. mech. data Symbol Typ ...
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Figure 14. SH – 4-pin SNAPHAT housing for 48mAh battery, package outline Note: Drawing is not to scale. Table 10. SH – 4-pin SNAPHAT housing for 48mAh battery, package mechanical data Symbol Typ ...
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Figure 15. SH – 4-pin SNAPHAT housing for 120mAh battery, package outline Note: Drawing is not to scale. Table 11. SH – 4-pin SNAPHAT housing for 120mAh battery, package mechanical data Symbol Typ ...
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Part numbering Table 12. Ordering information scheme Example: Device type M40SZ Supply voltage and write protect voltage 100Y = V = 4.5 to 5.5V 100W = V = 2.7 to 3.6V Package MQ = SO16 ...
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... M40SZ100, M40SZ100Y, M40SZ100W, 40SZ100, 40SZ100Y, 40SZ100W, ZEROPOWER, ZEROPOWER, ZEROPOWER, ZE- ROPOWER, ZEROPOWER, ZEROPOWER, ZEROPOWER, ZEROPOWER, ZEROPOWER, ZEROPOWER, ZEROPOWER, ZE- ROPOWER, ZEROPOWER, ZEROPOWER, ZEROPOWER, SUPERVISOR, SUPERVISOR, SUPERVISOR, SUPERVISOR, SUPERVISOR, SUPERVISOR, SUPERVISOR, SUPERVISOR, SUPERVISOR, SUPERVISOR, SUPERVISOR, SUPERVISOR, SUPERVISOR, SUPERVISOR, SUPERVISOR, NVRAM, NVRAM, NVRAM, NVRAM, NVRAM, NVRAM, NVRAM, NVRAM, NVRAM, ...
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