LRS1342 Sharp, LRS1342 Datasheet

no-image

LRS1342

Manufacturer Part Number
LRS1342
Description
Stacked chip 16M flash and 2M SRAM
Manufacturer
Sharp
Datasheet
Data Sheet
FEATURES
• Flash Memory and SRAM
• Stacked Die Chip Scale Package
• 72-ball CSP (FBGA072-P-0811) plastic package
• Power supply: 2.7 V to 3.6 V
• Operating temperature: -25°C to +85°C
• Flash Memory
PIN CONFIGURATION
Data Sheet
– Access time (MAX.): 100 ns
– Operating current (MAX.):
– Deep power down current (the current for
– Optimized array blocking architecture
NOTE: Two NC pins at the corner are connected.
72-BALL FBGA
The current for F-V
– Read: 25 mA (t
– Word write: 17 mA
– Block erase: 17 mA
F-V
F-RP ≤ -0.2 V, F-V
– Two 4K-word boot blocks
– Six 4K-word parameter blocks
CC
pin): 10 µA (MAX. F-CE ≥ F-V
CYCLE
PP
G
A
B
C
D
E
F
H
CC
≤ 0.2 V)
NC
NC
pin
1
INDEX
= 200 ns)
NC
Figure 1. LRS1341/LRS1342 Pin Configuration
NC
2
GND
F-WP
F-A
F-WE
S-LB S-UB S-OE
A
NC
NC
3
16
18
F-RY/
F-RP
F-V
F-A
CC
A
A
BY
A
4
11
8
5
PP
17
- 0.2 V,
F-A
A
A
T
T
A
A
5
15
10
1
2
7
4
16M Flash Memory and 2M SRAM
19
DQ
A
NC
A
A
A
T
T
6
14
9
3
4
6
0
11
DQ
DQ
DQ
F-CE GND
DQ
A
A
T
7
13
5
3
• SRAM
DESCRIPTION
organized as 1,048,576 × 16-bit flash memory and
131,072 × 16-bit static RAM in one package.
15
13
12
9
– Extended cycling capability
– Enhanced automated suspend options
– Access time (MAX.): 85 ns
– Operating current (MAX.):
– Standby current: 45 µA (MAX.)
– Data retention current: 35 µA (MAX.)
The LRS1341/LRS1342 is a combination memory
S-WE
S-CE
DQ
DQ
DQ
A
A
8
12
2
– Thirty-one 32K-word main blocks
– Top/Bottom boot location versions
– 100,000 block erase cycles
– Word write suspend to read
– Block erase suspend to word write
– Block erase suspend to read
– 45 mA
– 8 mA (t
10
6
8
2
LRS1341/LRS1342
DQ
S-V
F-OE
GND
DQ
DQ
DQ
A
9
1
CC
14
4
2
0
F-V
S-CE
DQ
DQ
DQ
DQ
NC
NC
10
RC
CC
7
5
3
1
1
, t
NC
NC
11
WC
= 1 µs)
NC
NC
12
Stacked Chip
TOP VIEW
LRS1342-1
1

Related parts for LRS1342

LRS1342 Summary of contents

Page 1

... Operating current (MAX.): – – – Standby current: 45 µA (MAX.) – Data retention current: 35 µA (MAX DESCRIPTION The LRS1341/LRS1342 is a combination memory organized as 1,048,576 × 16-bit flash memory and 131,072 × 16-bit static RAM in one package ...

Page 2

... LRS1341/LRS1342 F-A F F-CE F-OE F-WE F-RP F-WP S-CE S-CE S-OE S-WE S-UB Figure 2. LRS1341/LRS1342 Block Diagram 2 F-V F 16M (x16) BIT FLASH MEMORY (x16) BIT SRAM S-LB S-V CC Stacked Chip (16M Flash & 2M SRAM) F-RY/BY GND LRS1342-2 Data Sheet ...

Page 3

... Table 1. Pin Descriptions DESCRIPTION (with F- PPLK < PPLK LRS1341/LRS1342 TYPE Input Input Input Input Input Input Input Input Input Input Input Input HH Output Input/Output Power Power Power Power — — 3 ...

Page 4

... LRS1341/LRS1342 FLASH SRAM F-CE F-RP Read Standby L Output Disable Standby L Write Standby L Read H H Output Standby Disable H Write H Read X X Output Reset/Power Down Disable X Write X Standby Standby H Reset/Power Down Standby X NOTES Refer to DC Characteristics Refer to the ‘Flash Memory Command Definition’ section for valid D during a write operation ...

Page 5

... The WSM interrogates the F-WP and F-RP only after Block Erase or Word Write command sequences. It informs the system, depending on the attempted operation, if the F-WP is not V F-RP is not V 5. SR.0 is reserved for future use and should be masked out when polling the status register. LRS1341/LRS1342 LRS1342 DATA ) ( ...

Page 6

... MAIN BLOCK 01000 00FFF 0 32K-WORD MAIN BLOCK 00000 LRS1342-3 Figure 4. Top Boot for Flash Memory TOP BOOT LRS1342-13 Data Sheet ...

Page 7

... RATINGS -0 -25 to +85 OPR -55 to +125 STG -0.2 to +14.0 PP -0.5 to +14.0 TYP. MAX. 3.0 3 0.2 CC 0.6 12.6 . CONDITION MIN. TYP I/O LRS1341/LRS1342 UNIT NOTES °C ° UNIT NOTES MAX. UNIT ...

Page 8

... LRS1341/LRS1342 DC CHARACTERISTICS T = -25° 85° PARAMETER Input leakage current Output leakage current Standby Current Deep Power-Down Current Read Current F-V CC Word Write Current Block Erase Current Word Write Block Erase Suspend Current Standby or Read Current Deep Power-Down Current ...

Page 9

... 1.35 V 1TTL + C (30 pF) L SYMBOL t AVAV t AVQV t ELQV t PHQV t GLQV t ELQX t EHQZ t GLQX t GHQZ after the falling edge of F-CE without impact on t GLQV LRS1341/LRS1342 MIN. MAX. UNIT 100 ns 100 ns 100 ns 10 µ ELQV 9 ...

Page 10

... LRS1341/LRS1342 Write Cycle (F-WE Controlled -25°C to +85° PARAMETER Write Cycle Time F-RP HIGH Recovery to F-WE going to LOW F-CE Setup to F-WE going LOW F-WE Pulse Width F-RP V Setup to F-WE going HIGH HH F-WP V Setup to F-WE going HIGH IH F-V Setup to F-WE going HIGH PP Address Setup to F-WE going HIGH 2 Data Setup to F-WE going HIGH ...

Page 11

... QVVL t 0 QVPH t 0 QVSL and D for block erase or word write 2 3 MIN. TYP. MAX 1.8 0.3 1.2 0.5 7.5 8.6 19.3 23 LRS1341/LRS1342 MAX. UNIT ns µ 100 11 12 UNIT NOTES 1 MIN. TYP. MAX. ...

Page 12

... FLASH MEMORY AC CHARACTERISTICS TIMING DIAGRAMS Standby ADDRESS F-CE F-OE F-WE HIGH Z DQ F-V CC F-RP 12 Device Address Selection Address Stable t AVAV t GLQV t ELQV t GLQX t ELQX Valid Output t AVQV t PHQV Figure 5. Read Cycle Timing Diagram Stacked Chip (16M Flash & 2M SRAM) Data Valid t EHQZ t GHQZ t OH HIGH Z LRS1342-4 Data Sheet ...

Page 13

... Figure 6. Write Cycle Timing Diagram (F-WE Controlled) Data Sheet AVAV AVWH WHAX t WHWL t t DVWH WHGL t WHEH t t WHDX WHQV1 EHRL t SHWH t PHHWH t VPWH LRS1341/LRS1342 5 6 Data Valid SRD QVSL t QVPH t QVVL LRS1342-5 13 ...

Page 14

... Figure 7. Write Cycle Timing Diagram (F-CE Controlled AVAV AVEH t EHAX t t EHWH EHGL t t EHEL EHQV1 ELEH t DVEH t EHDX EHRL t SHEH t PHHEH t VPEH Stacked Chip (16M Flash & 2M SRAM Data Valid SRD QVSL t QVPH t QVVL LRS1342-6 Data Sheet ...

Page 15

... Figure 8. AC Waveform for Reset Operation Data Sheet SYMBOL MIN. , this CC t 100 PLPH t PLRZ t 100 VPH has been CC t PLPH A. Reset During Read Array Mode t PLRZ t PLPH B. Reset During Block Erase or Word Write t VPH C. F-RP Rising Timing LRS1341/LRS1342 MAX. UNIT NOTES ns 23.6 µ LRS1342-7 15 ...

Page 16

... LRS1341/LRS1342 SRAM AC ELECTRICAL CHARACTERISTICS AC Test Conditions PARAMETER Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Level Output Load* NOTE: *Including scope and jig capacitance. Read Cycle T = -25°C to +85° PARAMETER Read Cycle Time ...

Page 17

... Stacked Chip (16M Flash & 2M SRAM) SRAM AC CHARACTERISTICS TIMING DIAGRAMS ADDRESS S-CE 1 S-CE 2 S-UB, S-LB S-OE D OUT NOTE: S-WE is HIGH for Read Cycle. Data Sheet ACE1 BLZ OLZ Figure 9. Read Cycle Timing Diagram LRS1341/LRS1342 BHZ t OHZ Data Valid t OH LRS1342-8 17 ...

Page 18

... LOW S-WE going LOW, S-CE going HIGH 1 2 going HIGH measured from the beginning of WP going LOW or S-CE going HIGH to the end 1 2 Stacked Chip (16M Flash & 2M SRAM (NOTE (NOTE Data Valid LRS1342-9 Data Sheet ...

Page 19

... BW (NOTE (NOTE 7) HIGH IMPEDANCE (NOTE HIGH S-CE and a LOW S-WE going LOW, S-CE going HIGH 1 2 going HIGH measured from the beginning of WP going LOW or S-CE going HIGH to the end 1 2 LRS1341/LRS1342 (NOTE Data Valid LRS1342-10 19 ...

Page 20

... LOW S-WE going LOW, S-CE going HIGH 1 2 going HIGH measured from the beginning of WP going LOW or S-CE going HIGH to the end 1 2 Stacked Chip (16M Flash & 2M SRAM (NOTE (NOTE Data Valid LRS1342-11 Data Sheet ...

Page 21

... R ≤ 0.2 V (S-CE controlled Data Retention Mode t CDR ≥ V S- CCDR , fix the input level of S-CE between 1 2 Data Retention Mode t CDR ≤ 0.2 V S-CE 2 LRS1341/LRS1342 1 MIN. TYP. MAX. UNIT 2.0 3 µ controlled Controlled Controlled) 2 NOTES 2 2 LRS1342-12 LRS1342-13 21 ...

Page 22

... LRS1341/LRS1342 GENERAL DESIGN GUIDELINES Supply Power Maximum difference (between F-V the voltage is less than 0.3 V. Power Supply and Chip Enable of Flash Memory and SRAM S-CE should not be LOW and S-CE 1 HIGH when F-CE is LOW simultaneously. If the two memories are active together, they may not operate normally because of interference noises or data collision on DQ bus ...

Page 23

... SIDE VIEW 0.10 S 1.1 TYP. 0.8 TYP. H BOTTOM VIEW NOTE: Dimensions are in mm. Data Sheet INDEX +0.2 11 (See Detail) 0.4 TYP. C 1.2 TYP. 0.8 TYP φ 0. φ 0.45 ±0.05 φ 0. LRS1341/LRS1342 0.40 TYP. DETAIL 0.35 ±0.05 0.4 TYP 1.4 MAX. 72FBGA 23 ...

Page 24

... LRS1341/LRS1342 LIFE SUPPORT POLICY SHARP components should not be used in medical devices with life support functions or in safety equipment (or similiar applications where component failure would result in loss of life or physical harm) without the written approval of an officer of the SHARP Corporation. LIMITED WARRANTY SHARP warrants to its Customer that the Products will be free from defects in material and workmanship under normal use and service for a period of one year from the date of invoice ...

Related keywords