PHN110 Philips Semiconductors, PHN110 Datasheet
PHN110
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PHN110 Summary of contents
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... DISCRETE SEMICONDUCTORS DATA SHEET PHN110 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1996 Jul 16 File under Discrete Semiconductors, SC13b 1997 Jun 17 ...
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... The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. CONDITIONS Product specification PHN110 n. MAM116 Fig.1 Simplified outline and symbol. CAUTION MIN. MAX ...
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... K/W. th a-tp (ambient to tie-point K/W. th a-tp MBG848 2 10 handbook, halfpage 150 200 0.01; T (1) R DSon limitation 3 Product specification PHN110 MIN. MAX 2.8 2.4 1.1 65 +150 65 +150 3.5 14 MBG750 ( 100 100 ms ...
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... (K/W) = 0.75 0.5 10 0.33 0.2 0.1 0.05 1 0.02 0. Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values. 1997 Jun 17 PARAMETER Product specification PHN110 VALUE UNIT 25 K/W MBG749 (s) 1 ...
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... gen gen 1. 1.25 A; di/dt = 100 Product specification PHN110 MIN. TYP. MAX. UNIT 2.8 V 100 nA 100 nA 0.11 0.2 0.08 0.1 250 pF 140 2 ...
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... 150 Fig.8 Source current as a function of source-drain diode forward voltage; typical values. 6 Product specification PHN110 MBG748 6 V 5 (V) MBG746 (1) (2) (3) 0.4 0.8 1 (V) ...
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... MHz Fig.10 Capacitance as a function of drain-source out out 0 t d(on Product specification PHN110 MBG847 C iss C oss C rss ( voltage; typical values d(off MBH538 t off 24 ...
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... DSon k = ---------------------------------------- - DSon ( ( Fig.13 Temperature coefficient of drain-source on-resistance; typical values. 8 Product specification PHN110 MBG744 (1) ( 125 175 Typical R at: DSon = 4 ...
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... 2.5 scale (1) ( 0.25 5.0 4.0 6.2 1.27 0.19 4.8 3.8 5.8 0.0100 0.20 0.16 0.244 0.050 0.041 0.0075 0.19 0.15 0.228 REFERENCES JEDEC EIAJ MS-012AA 9 Product specification PHN110 detail 1.0 0.7 1.05 0.25 0.25 0.1 0.4 0.6 0.039 0.028 0.01 0.01 0.004 0.016 0.024 EUROPEAN ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jun 17 10 Product specification PHN110 ...
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... Philips Semiconductors N-channel enhancement mode MOS transistor 1997 Jun 17 NOTES 11 Product specification PHN110 ...
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... Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel ...