K4S281632B-NC1L Samsung, K4S281632B-NC1L Datasheet

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K4S281632B-NC1L

Manufacturer Part Number
K4S281632B-NC1L
Description
128Mb SDRAM, 3.3V, LVTTL, 100MHz
Manufacturer
Samsung
Datasheet
K4S281632B-N
2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP
FEATURES
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
• All inputs are sampled at the positive going edge of the system
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
FUNCTIONAL BLOCK DIAGRAM
clock.
- CAS latency (2 & 3)
- Burst length (1, 2, 4, 8 & Full page)
- Burst type (Sequential & Interleave)
ADD
CLK
LCKE
CLK
* Samsung Electronics reserves the right to change products or specification without notice.
LRAS
CKE
Bank Select
LCBR
CS
LWE
RAS
Timing Register
LCAS
shrink-TSOP
CAS
Latency & Burst Length
GENERAL DESCRIPTION
data rate Dynamic RAM organized as 4 x 2,097,152 words by
16 bits, fabricated with SAMSUNG s high performance CMOS
technology. Synchronous design allows precise cycle control
with the use of system clock I/O transactions are possible on
every clock cycle. Range of operating frequencies, programma-
ble burst length and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high perfor-
mance memory system applications.
ORDERING INFORMATION
Programming Register
WE
K4S281632B-NC/L1H
K4S281632B-NC/L1L
Data Input Register
The K4S281632B-N is 134,217,728 bits synchronous high
Column Decoder
2M x 16
2M x 16
2M x 16
2M x 16
Part No.
LDQM
LWCBR
UDQM
100MHz(CL=2)
100MHz(CL=3)
Max Freq.
CMOS SDRAM
LDQM
Interface Package
LVTTL
LWE
LDQM
DQi
sTSOP(II)
54pin

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K4S281632B-NC1L Summary of contents

Page 1

... Samsung Electronics reserves the right to change products or specification without notice. shrink-TSOP GENERAL DESCRIPTION The K4S281632B-N is 134,217,728 bits synchronous high data rate Dynamic RAM organized 2,097,152 words by 16 bits, fabricated with SAMSUNG s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle ...

Page 2

... K4S281632B-N PIN CONFIGURATION (Top view DQ0 DDQ 4 DQ1 DQ2 SSQ DQ3 7 8 DQ4 9 V DDQ DQ5 10 DQ6 SSQ 13 DQ7 LDQM CAS 17 RAS BA0 20 BA1 21 22 A10/ PIN FUNCTION DESCRIPTION ...

Page 3

... K4S281632B-N ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. ...

Page 4

... CC3 Operating current I CC4 (Burst mode) Refresh current I CC5 Self refresh current I CC6 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S281632B-NC** 4. K4S281632B-NL** 5. Unless otherwise noted, input swing IeveI is CMOS(V shrink-TSOP = Test Condition Burst length = (min ...

Page 5

... K4S281632B-N AC OPERATING TEST CONDITIONS Parameter AC input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition 3.3V 1200 Output 50pF 870 (Fig output load circuit OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) ...

Page 6

... K4S281632B-N AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter Symbol CAS latency=3 CLK cycle time CAS latency=2 CAS latency=3 CLK to valid t output delay CAS latency=2 CAS latency=3 Output data hold time CAS latency=2 CLK high pulse width CLK low pulse width Input setup time ...

Page 7

... K4S281632B-N SIMPLIFIED TRUTH TABLE Command Register Mode register set Auto refresh Entry Refresh Self fefresh Exit Bank active & row addr. Read & Auto precharge disable column address Auto precharge enable Write & Auto precharge disable column address Auto precharge enable ...

Page 8

... K4S281632B-N PACKAGE DIMENSIONS FOR 54-sTSOP #54 #1 0.10 MAX 0.004 0. 0.016 0.006 shrink-TSOP #28 #27 11.60 MAX 0.457 11.20 0.10 0.21 0.441 0.004 0.008 0.40 0.16 0.10 0.0157 0.004 CMOS SDRAM Unit : Millimeters 0~8 C 0.25 TYP 0.010 +0.075 0.125 -0.035 +0.003 0.005 -0.001 1.00 1.20 0.05 0.10 MAX 0.039 0.047 0.002 0.004 0.05 MIN 0.010 ...

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