KM416V4000BS-6 Samsung, KM416V4000BS-6 Datasheet
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KM416V4000BS-6
Related parts for KM416V4000BS-6
KM416V4000BS-6 Summary of contents
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... All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Fur- thermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung s advanced CMOS process to realize high band-width, low power consumption and high reliability. ...
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KM416V4000B, KM416V4100B PIN CONFIGURATION (Top Views) •KM416V40(1)00BS DQ0 3 48 DQ1 4 47 DQ2 5 46 DQ3 DQ4 8 43 DQ5 9 42 DQ6 10 41 DQ7 11 ...
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KM416V4000B, KM416V4100B ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" ...
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KM416V4000B, KM416V4100B DC AND OPERATING CHARACTERISTICS Symbol Power I Don t care CC1 Normal I Don t care CC2 L I Don t care CC3 I Don t care CC4 Normal I Don t care CC5 L I Don t ...
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KM416V4000B, KM416V4100B CAPACITANCE (T = Parameter Input capacitance [A0 ~ A12] Input capacitance [RAS, UCAS, LCAS, W, OE] Output capacitance [DQ0 - DQ15] AC CHARACTERISTICS ( Test condition : V =3.3V 0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V CC ...
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KM416V4000B, KM416V4100B AC CHARACTERISTICS (Continued) Parameter Refresh period (Normal) Refresh period (L-ver) Write command set-up time CAS to W delay time RAS to W delay time Column address to W delay time CAS precharge W delay time CAS set-up time ...
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KM416V4000B, KM416V4100B TEST MODE CYCLE Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS Access time from column address RAS pulse width CAS pulse width RAS hold time CAS hold time ...
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KM416V4000B, KM416V4100B NOTES §Á initial pause of 200 is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles before proper device operation is achieved (min) and V (max) are reference levels for ...
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KM416V4000B, KM416V4100B are referenced to the earlier CAS falling edge. 13. ASC CAH 14 specified from the later CAS rising edge in the previous cycle to the earlier CAS falling edge in the next cycle. ...
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KM416V4000B, KM416V4100B WORD READ CYCLE RAS UCAS LCAS ASR ADDRESS ...
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KM416V4000B, KM416V4100B LOWER BYTE READ CYCLE NOTE : D = OPEN RAS UCAS LCAS ASR ...
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KM416V4000B, KM416V4100B UPPER BYTE READ CYCLE NOTE : D = OPEN RAS UCAS LCAS ASR ...
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KM416V4000B, KM416V4100B WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR ...
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KM416V4000B, KM416V4100B LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ...
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KM416V4000B, KM416V4100B UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ...
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KM416V4000B, KM416V4100B WORD WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ...
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KM416V4000B, KM416V4100B LOWER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ...
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KM416V4000B, KM416V4100B UPPER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ...
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KM416V4000B, KM416V4100B WORD READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW ...
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KM416V4000B, KM416V4100B LOWER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW ...
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KM416V4000B, KM416V4100B UPPER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW ...
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KM416V4000B, KM416V4100B FAST PAGE MODE WORD READ CYCLE RAS CRP UCAS CRP LCAS ASR RAH ...
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KM416V4000B, KM416V4100B FAST PAGE MODE LOWER BYTE READ CYCLE RAS CRP UCAS CRP LCAS ASR RAH V - ...
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KM416V4000B, KM416V4100B FAST PAGE MODE UPPER BYTE READ CYCLE RAS CRP UCAS CRP LCAS ASR RAH V - ...
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KM416V4000B, KM416V4100B FAST PAGE MODE WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ...
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KM416V4000B, KM416V4100B FAST PAGE MODE LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP ...
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KM416V4000B, KM416V4100B FAST PAGE MODE UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP ...
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KM416V4000B, KM416V4100B FAST PAGE MODE WORD READ-MODIFY-WRITE CYCLE RAS CRP UCAS CRP LCAS RAD t ASR t ASC V ...
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KM416V4000B, KM416V4100B FAST PAGE MODE LOWER BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS RAD ...
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KM416V4000B, KM416V4100B FAST PAGE MODE UPPER BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS RAD ...
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KM416V4000B, KM416V4100B RAS - ONLY REFRESH CYCLE NOTE : Don t care OPEN OUT RAS CRP UCAS CRP ...
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KM416V4000B, KM416V4100B HIDDEN REFRESH CYCLE ( READ ) RAS CRP UCAS CRP LCAS ASR ADDRESS ...
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KM416V4000B, KM416V4100B HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ...
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KM416V4000B, KM416V4100B CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : Don t care RAS UCAS LCAS V - ...
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KM416V4000B, KM416V4100B PACKAGE DIMENSION 50 TSOP(II) 400mil 0.034 (0.875) 0.841 (21.35) MAX 0.821 (20.85) 0.829 (21.05) 0.0315 (0.80) 0.002 (0.05) MIN 0.010 (0.25) 0.018 (0.45) CMOS DRAM Units : Inches (millimeters) 0.004 (0.10) 0.010 (0.25) 0.047 (1.20) 0.010 (0.25) MAX ...