2501N Fairchild Semiconductor, 2501N Datasheet

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2501N

Manufacturer Part Number
2501N
Description
2501NDual N-Channel 2.5V Specified PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

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FDW2501N
Dual N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
2004 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
Package Marking and Ordering Information
D
Load switch
Motor drive
DC/DC conversion
Power management
J
DSS
GSS
D
, T
JA
Device Marking
STG
2501N
TSSOP-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
FDW2501N
– Continuous
– Pulsed
Device
Parameter
Pin 1
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
Features
6 A, 20 V.
Extended V
High performance trench technology for extremely
low R
Low profile TSSOP-8 package
DS(ON)
1
2
3
4
GSS
Tape width
R
R
range (±12V) for battery applications.
DS(ON)
DS(ON)
12mm
-55 to +150
Ratings
125
208
1.0
0.6
20
30
12
6
= 0.018
= 0.028
@ V
@ V
8
7
6
5
March 2004
GS
GS
FDW2501N Rev E(W)
3000 units
= 4.5V
= 2.5V
Quantity
Units
C/W
W
V
V
A
C

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2501N Summary of contents

Page 1

... T =25 C unless otherwise noted A Ratings (Note 1a) (Note 1a) (Note 1b) -55 to +150 (Note 1a) (Note 1b) Reel Size Tape width 13’’ 12mm March 2004 = 0.018 @ 0.028 @ Units 1.0 W 0.6 C 125 C/W 208 Quantity 3000 units FDW2501N Rev E(W) ...

Page 2

... 0. determined by the user's board design. CA Min Typ Max Units mV 100 0.4 0.9 1.5 V -3.2 mV 15.5 18 19.6 28 =125 1290 pF 315 pF 170 2 6.7 nC 0.83 A 0.7 1.2 V (Note 2) FDW2501N Rev E(W) ...

Page 3

... Source Current and Temperature 2.0V GS 2.5V 3.0V 3.5V 4.0V 4. DRAIN CURRENT ( 3. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDW2501N Rev E( 1.2 ...

Page 4

... C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 208°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( =208 °C/W JA P(pk ( Duty Cycle 100 1000 FDW2501N Rev E(W) 20 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...

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