K7B803625B-QC75 Samsung, K7B803625B-QC75 Datasheet
K7B803625B-QC75
Related parts for K7B803625B-QC75
K7B803625B-QC75 Summary of contents
Page 1
... The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques- tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. ...
Page 2
... K7A803609B K7A801809B 8Mb SB/SPB Synchronous SRAM Ordering Information Org. Part Number K7B801825B-QC(I)65/75 512Kx18 K7A801800B-QC(I)16/14 K7A801809B-QC(I)25 K7B803625B-QC(I)65/75 256Kx36 K7A803600B-QC(I)16/14 K7A803609B-QC(I)25 256Kx36 & 512Kx18 Synchronous SRAM Speed Mode VDD FT ; Access Time(ns) Pipelined ; Cycle Time(MHz) SB 3.3 6.5/7.5 ns SPB(2E1D) 3.3 167/138 MHz SPB(2E1D) 3.3 250 MHz SB 3.3 6.5/7.5 ns SPB(2E1D) 3 ...
Page 3
... ZZ pin controls Power Down State and reduces Stand-by current regardless of CLK. The K7A803609B and K7A801809B are fabricated using -25 Unit SAMSUNG′s high performance CMOS technology and is 4.0 ns available in a 100pin TQFP and Multiple power and ground pins are utilized to minimize ground bounce. ...
Page 4
K7A803609B K7A801809B PIN CONFIGURATION (TOP VIEW) DQPc 1 DQc 0 2 DQc DDQ V 5 SSQ DQc 2 6 DQc 3 7 DQc 4 8 DQc SSQ 10 V DDQ 11 DQc 6 ...
Page 5
K7A803609B K7A801809B PIN CONFIGURATION (TOP VIEW) N.C. 1 N. DDQ V 5 SSQ N. N.C. DQb 8 0 DQb SSQ V 11 DDQ DQb 12 2 DQb 13 3 ...
Page 6
K7A803609B K7A801809B FUNCTION DESCRIPTION The K7A803609B and K7A801809B are synchronous SRAM designed to support the burst address accessing sequence of the Power PC based microprocessor. All inputs (with the exception of OE, LBO and ZZ) are sampled on rising clock ...
Page 7
K7A803609B K7A801809B TRUTH TABLES SYNCHRONOUS TRUTH TABLE ADSP ADSC ADV ...
Page 8
K7A803609B K7A801809B ABSOLUTE MAXIMUM RATINGS* PARAMETER Voltage on V Supply Relative Voltage on V Supply Relative to V DDQ SS Voltage on Input Pin Relative Voltage on I/O Pin Relative ...
Page 9
K7A803609B K7A801809B DC ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Input Leakage Current(except ZZ Output Leakage Current I OL Operating Current Standby Current I SB1 I SB2 Output Low Voltage(3.3V I/ Output High Voltage(3.3V I/O) ...
Page 10
K7A803609B K7A801809B Output Load(A) Dout Zo=50Ω AC TIMING CHARACTERISTICS PARAMETER Cycle Time Clock Access Time Output Enable to Data Valid Clock High to Output Low-Z Output Hold from Clock High Output Enable Low to Output Low-Z Output Enable High to ...
Page 11
K7A803609B K7A801809B 256Kx36 & 512Kx18 Synchronous SRAM - 11 - Nov. 2003 Rev 3.0 ...
Page 12
K7A803609B K7A801809B 256Kx36 & 512Kx18 Synchronous SRAM - 12 - Nov. 2003 Rev 3.0 ...
Page 13
K7A803609B K7A801809B 256Kx36 & 512Kx18 Synchronous SRAM - 13 - Nov. 2003 Rev 3.0 ...
Page 14
K7A803609B K7A801809B 256Kx36 & 512Kx18 Synchronous SRAM - 14 - Nov. 2003 Rev 3.0 ...
Page 15
K7A803609B K7A801809B 256Kx36 & 512Kx18 Synchronous SRAM - 15 - Nov. 2003 Rev 3.0 ...
Page 16
... K7A803609B K7A801809B APPLICATION INFORMATION DEPTH EXPANSION The Samsung 256Kx36 Synchronous Pipelined Burst SRAM has two additional chip selects for simple depth expansion. This permits easy secondary cache upgrades from 256K depth to 512K depth without extra logic. Data Address A [0:18] CLK Microprocessor CLK ...
Page 17
... K7A803609B K7A801809B APPLICATION INFORMATION DEPTH EXPANSION The Samsung 512Kx18 Synchronous Pipelined Burst SRAM has two additional chip selects for simple depth expansion. This permits easy secondary cache upgrades from 512K depth to 1M depth without extra logic. Data Address A [0:19] CLK Microprocessor CLK ...
Page 18
K7A803609B K7A801809B PACKAGE DIMENSIONS 100-TQFP-1420A 22.00 20.00 #1 0.65 256Kx36 & 512Kx18 Synchronous SRAM ±0.30 ±0.20 16.00 ±0.30 14.00 ±0.20 (0.83) (0.58) 0.30 ±0.10 0.10 MAX 1.40 ±0.10 1.60 MAX 0.05 MIN 0.50 ±0. Units ; millimeters/Inches ...