R1RW0416DSB-2LR Renesas Electronics Corporation., R1RW0416DSB-2LR Datasheet
R1RW0416DSB-2LR
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R1RW0416DSB-2LR Summary of contents
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R1RW0416D Series 4M High Speed SRAM (256-kword Description The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology most appropriate for ...
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... R1RW0416D Series Ordering Information Type No. Access time R1RW0416DGE-2PR 12 ns R1RW0416DGE-2LR 12 ns R1RW0416DSB-2PR 12 ns R1RW0416DSB-2LR 12 ns Pin Arrangement 44-pin SOJ WE# ...
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R1RW0416D Series Pin Description Pin name A0 to A17 I/O1 to I/O16 CS# OE# WE# UB# LB Rev.1.00, Mar.12.2004, page Function Address input Data input/output Chip select Output enable Write enable Upper ...
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R1RW0416D Series Block Diagram (LSB) A14 A13 A12 A11 A10 A3 A1 (MSB) I/ I/O8 I/ I/O16 WE# CS# LB# UB# OE# CS Rev.1.00, Mar.12.2004, page Memory matrix ...
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R1RW0416D Series Operation Table CS# OE# WE# LB# UB# Mode H Standby Output disable Read Lower byte read Upper byte read ...
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R1RW0416D Series DC Characteristics ( + 3 Parameter Input leakage current Output leakage current Operating power supply current Standby power supply current Output voltage Note: 1. This characteristics is ...
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R1RW0416D Series AC Characteristics ( + 3.3 V 0.3 V, unless otherwise noted.) CC Test Conditions Input pulse levels: 3.0 V/0.0 V Input rise and fall time Input and output timing reference ...
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R1RW0416D Series Write Cycle Parameter Write cycle time Address valid to end of write Chip select to end of write Write pulse width Byte select to end of write Address setup time Write recovery time Data to write time overlap ...
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R1RW0416D Series Timing Waveforms Read Timing Waveform (1) (WE Address CS# OE# LB#, UB# High impedance D OUT Rev.1.00, Mar.12.2004, page Valid address ACS ...
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R1RW0416D Series Read Timing Waveform (2) (WE Address CS# OE# High impedance D OUT Rev.1.00, Mar.12.2004, page LB UB Valid address t AA ...
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R1RW0416D Series Write Timing Waveform (1) (WE# Controlled) Address WE#* 3 CS#* OE# LB#, UB# D OUT D IN Rev.1.00, Mar.12.2004, page Valid address ...
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R1RW0416D Series Write Timing Waveform (2) (CS# Controlled) Address WE CS# * OE# LB#, UB# D OUT D IN Rev.1.00, Mar.12.2004, page Valid address ...
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R1RW0416D Series Write Timing Waveform (3) (LB#, UB# Controlled, OE Address 3 WE UB# (LB#) LB# (UB -LB - -UB OUT Rev.1.00, Mar.12.2004, page ...
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R1RW0416D Series Low V Data Retention Characteristics CC ( +70 C) This characteristics is guaranteed only for L-version. Parameter V for data retention CC Data retention current Chip deselect to data retention time Operation recovery time Low ...
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Revision History Rev. Date Contents of Modification Page Description 0.01 Sep. 30, 2003 Initial issue 1.00 Mar.12.2004 Deletion of Preliminary R1RW0416D Series Data Sheet ...
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Sales Strategic Planning Div. Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble ...