BCR503 Siemens Semiconductor Group, BCR503 Datasheet
BCR503
Manufacturer Part Number
BCR503
Description
Manufacturer
Siemens Semiconductor Group
Datasheet
1.BCR503.pdf
(4 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BCR503 E6327
Manufacturer:
INFINEON
Quantity:
9 000
Company:
Part Number:
BCR503E6327
Manufacturer:
MAX
Quantity:
4 222
NPN Silicon Digital Transistor
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm
Semiconductor Group
• Switching circuit, inverter, interface circuit,
• Built in bias resistor (R
Type
BCR 503
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, T
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient
Junction - soldering point
drive circuit
Marking Ordering Code
XAs
1)
1
=2.2k , R
S
Q62702-C2370
°C
2
=2.2k )
2
Cu
1
Symbol
V
V
V
V
I
P
T
T
R
R
C
j
stg
CEO
CBO
EBO
i(on)
tot
thJA
thJS
Pin Configuration
1 = B
2 = E
- 65 ... + 150
Values
500
330
150
50
50
10
12
325
215
3 = C
Package
SOT-23
BCR 503
Nov-27-1996
Unit
V
mA
mW
°C
K/W
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BCR503 Summary of contents
Page 1
NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drive circuit • Built in bias resistor (R =2. Type Marking Ordering Code BCR 503 XAs Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on ...
Page 2
Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage I = 100 µ Collector-base breakdown voltage µ Collector cutoff current ...
Page 3
DC Current Gain (common emitter configuration Input on Voltage ...
Page 4
Total power dissipation P * Package mounted on epoxy 400 mW P tot 300 T A 250 200 150 100 Permissible Pulse Load K/W R thJS ...