6MBI450V-120-50 Fuji Electric holdings CO.,Ltd, 6MBI450V-120-50 Datasheet - Page 3

• Manufacturer Part Number: 6MBI450V-120-50
• Manufacturer: Fuji Electric holdings CO.,Ltd

6MBI450V-120-50
Characteristics (Representative)
Gate Capacitance vs. Collector-Emitter Voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
1000
1000
800
600
400
200
800
600
400
200
1000
0
0
100
0
0
10
1
Vge= 0V, ƒ= 1MHz, Tj= 25°C
0
Collector-Emitter Voltage: Vce [V]
Collector-Emitter voltage: Vce [V]
Collector-Emitter voltage: Vce [V]
1
1
Vge= 15V / chip
Vge=20V
Tj= 25°C / chip
[INVERTER]
Tj=25°C
[INVERTER]
[INVERTER]
10
2
2
15V
Cres
150°C
Cies
Coes
125°C
3
3
20
12V
4
4
10V
8V
30
5
5
3
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
1000
800
600
400
200
10
0
8
6
4
2
0
0
5
0
Vcc=600V, Ic=450A, Tj= 25°C
Vge
Dynamic Gate Charge (typ.)
1000
Collector-Emitter voltage: Vce [V]
Gate-Emitter Voltage: Vge [V]
1
Tj= 150°C / chip
10
[INVERTER]
[INVERTER]
Gate charge: Qg [nC]
Tj= 25°C / chip
[INVERTER]
2000
Vge= 20V
2
3000
15
Vce
3
4000
15V
8V
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20
5000
Ic=900A
Ic=450A
Ic=225A
4
IGBT Modules
12V
10V
6000
25
5