ESM3045DV_03 STMicroelectronics, ESM3045DV_03 Datasheet

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ESM3045DV_03

Manufacturer Part Number
ESM3045DV_03
Description
Manufacturer
STMicroelectronics
Datasheet
INDUSTRIAL APPLICATIONS:
ABSOLUTE MAXIMUM RATINGS
September 2003
V
Symbol
CEO(sus)
HIGH CURRENT POWER BIPOLAR MODULE
VERY LOW R
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
ULTRAFAST FREEWHEELING DIODE
FULLY INSULATED PACKAGE (UL
COMPLIANT)
EASY TO MOUNT
LOW INTERNAL PARASITIC INDUCTANCE
MOTOR CONTROL
SMPS & UPS
DC/DC & DC/AC CONVERTERS
WELDING EQUIPMENT
V
V
V
T
P
I
I
CEV
EBO
I
CM
T
I
BM
isol
stg
C
B
tot
j
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at T
Insulation Withstand Voltage (RMS) from All
Four Terminals to Exernal Heatsink
Storage Temperature
Max. Operating Junction Temperature
®
th
JUNCTION CASE
Parameter
p
c
= 10 ms)
= 25
C
NPN DARLINGTON POWER MODULE
p
= 0)
= 10 ms)
B
o
BE
C
= 0)
= -5 V)
INTERNAL SCHEMATIC DIAGRAM
-55 to 150
Value
2500
600
450
125
150
2.5
ISOTOP
24
36
7
5
ESM3045DV
Unit
o
o
W
V
V
V
A
A
A
A
V
C
C
1/8

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ESM3045DV_03 Summary of contents

Page 1

HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION CASE th SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE (UL COMPLIANT) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: MOTOR CONTROL SMPS & UPS DC/DC & ...

Page 2

ESM3045DV THERMAL DATA R Thermal Resistance Junction-case (transistor) thj-case R Thermal Resistance Junction-case (diode) thj-case R Thermal Resistance Case-heatsink With Conductive thc-h Grease Applied ELECTRICAL CHARACTERISTICS (T Symbol Parameter I # Collector Cut-off CER Current ( ...

Page 3

Safe Operating Areas Derating Curve Collector Emitter Saturation Voltage Thermal Impedance Collector-emitter Voltage Versus base-emitter Resistance Base-Emitter Saturation Voltage ESM3045DV 3/8 ...

Page 4

ESM3045DV Reverse Biased SOA Reverse Biased AOA Switching Times Inductive Load 4/8 Foward Biased SOA Forward Biased AOA Switching Times Inductive Load Versus Temperature ...

Page 5

Dc Current Gain Peak Reverse Current Versus di Turn-on Switching Waveforms Typical V /dt Turn-on Switching Test Circuit F ESM3045DV Versus 5/8 ...

Page 6

ESM3045DV Turn-on Switching Test Circuit Turn-off Switching Test Circuit of Diode 6/8 Turn-off Switching Waveforms Turn-off Switching Waveform of Diode ...

Page 7

ISOTOP MECHANICAL DATA DIM. MIN. TYP. A 11.8 A1 8.9 B 7.8 C 0.75 C2 1.95 D 37.8 D1 31.5 E 25.15 E1 23.85 E2 24.8 G 14.9 G1 12.6 G2 3.5 F 4 ...

Page 8

... This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States ...

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