BSM300GA120DN2E3166 Siemens Semiconductor Group, BSM300GA120DN2E3166 Datasheet - Page 5

• Manufacturer Part Number: BSM300GA120DN2E3166
• Description: IGBT Power Module (Single switch Including fast free-wheeling diodes Enlarged diode area)
• Manufacturer: Siemens Semiconductor Group

Typ. output characteristics
I
Typ. transfer characteristics
I
Semiconductor Group
parameter: t
parameter: t
C
C
I
I
C
C
= f (V
= f (V
600
500
450
400
350
300
250
200
150
100
600
500
450
400
350
300
250
200
150
100
50
50
A
A
0
0
CE
GE
0
0
)
)
p
p
2
17V
15V
13V
11V
9V
7V
= 80 µs, V
= 80 µs, T
1
4
2
6
CE
j
= 25 °C
= 20 V
8
3
10
V
V
V
V
CE
GE
14
5
5
Typ. output characteristics
I
C
parameter: t
I
C
= f (V
600
500
450
400
350
300
250
200
150
100
50
A
0
CE
0
)
p
17V
15V
13V
11V
9V
7V
= 80 µs, T
BSM300GA120DN2E3166
1
2
j
= 125 °C
3
V
Mar-29-1996
V
CE
5