TL072SG-13 Diodes Inc, TL072SG-13 Datasheet - Page 4
![IC OPAMP JFET DUAL 8-SOIC](/photos/5/42/54225/sop-8l_sml.jpg)
TL072SG-13
Manufacturer Part Number
TL072SG-13
Description
IC OPAMP JFET DUAL 8-SOIC
Manufacturer
Diodes Inc
Datasheet
1.TL072SG-13.pdf
(11 pages)
Specifications of TL072SG-13
Amplifier Type
J-FET
Number Of Circuits
2
Slew Rate
13 V/µs
Gain Bandwidth Product
3MHz
Current - Input Bias
65pA
Voltage - Input Offset
3000µV
Current - Supply
1.4mA
Voltage - Supply, Single/dual (±)
10 V ~ 30 V, ±5 V ~ 15 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Output Type
-
Current - Output / Channel
-
-3db Bandwidth
-
Lead Free Status / Rohs Status
Details
Other names
TL072SG-13DITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TL072SG-13
Manufacturer:
AD
Quantity:
6 033
Part Number:
TL072SG-13
Manufacturer:
TI/德州仪器
Quantity:
20 000
Electrical Characteristics
Notes:
TL072 Rev. 1
Symbol
V
CMRR
O1
THD
V
k
V
α
A
SR
V
θ
θ
I
Vn
I
B
v
I
SVR
In
CC
tr
ICR
r
IO
IB
OM
VD
/V
JA
JC
IO
IO
i
1
O2
9. Test condition for SOP-8L: Devices mounted on FR-4 substrate PC board, with minimum recommended pad layout.
Input Offset Voltage
Temperature Coefficient
of Input Offset Voltage
Input Offset Current
Input Bias Current
Common Mode
Input Voltage Range
Maximum Peak
Output Voltage Swing
Large Signal Differential
Voltage Amplification
Unity Gain Bandwidth
Input Resistance
Common Mode
Rejection Ratio
Supply Voltage
Rejection Ratio
(ΔV
Supply Current
(each amplifier)
Crosstalk Attenuation
Slew Rate at Unity Gain
Rise Time
Overshoot Factor
Equivalent Input Noise
Voltage
Equivalent Input Noise
Current
Total Harmonic
Distortion
Thermal Resistance
Junction-to-Ambient
Thermal Resistance
Junction-to-Case
CC
±/ΔV
Parameter
IO
)
V
R
V
V
V
R
R
R
V
R
T
V
R
V
V
R
V
No load
A
V
(See Figure 1)
V
(See Figure 1)
R
R
V
R
f=1kHz
SOP-8L (Note 9)
SOP-8L (Note 9)
A
O
O
O
O
O
IC
CC
O
O
VD
I
I
Irms
S
L
L
L
L
S
S
S
S
L
=10V, C
=20mV, R
=25
=10kΩ, T
≧10kΩ,
≧2kΩ
≧2kΩ
≧2kΩ, R
=50Ω
=50Ω, T
=50Ω, T
=20Ω
=20Ω, f=1kHz
=0,
=0, R
=0
=0
=±10V,
=0
=0, T
=V
(V
=100, T
=±9 to ±15V
=6V, A
CC±
ICRmin
www.diodes.com
o
Test Conditions
C
A
S
=25
=50Ω, T
= ±15V, T
L
, V
A
A
=100pF, R
A
VD
A
=25
=25
S
L
4 of 11
=25
≦1kΩ,
=25
=2kΩ, C
o
=1,
f=1kHz
f=10 Hz to 10kHz
O
C
=0
T
T
T
T
T
T
T
T
T
o
o
o
LOW NOISE JFET INPUT OPERATIONAL
C
C
o
A
A
A
A
A
A
A
A
A
A
C
C
=25
= full range
= full range
=25
= full range
=25
= full range
= full range
=25
= full range
A
L
= 25
L
=100pF
o
o
o
o
=2kΩ
C
C
C
C
o
C; unless otherwise noted)
Min
±11
±12
±12
±10
50
25
75
80
8
-12~+15
±13.5
0.003
Typ.
0.01
10
200
100
100
120
145
1.4
0.1
18
65
13
20
18
35
3
5
3
4
12
©
AMPLIFIERS
Max
100
200
Diodes Incorporated
2.5
20
6
8
2
TL072
JULY 2009
pA
nV
μV/
V/mV
o
o
MHz
Unit
V/μs
C/W
C/W
mV
mA
pA
nA
pA
nA
dB
dB
dB
μV
μs
%
%
Ω
V
V
o
HZ
HZ
C