SKM200GB123D_06 Semikron International, SKM200GB123D_06 Datasheet
SKM200GB123D_06
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SKM200GB123D_06 Summary of contents
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SKM 200GB123D ® SEMITRANS 3 Trench IGBT Modules SKM 200GB123D SKM 200GAL123D SKM 200GAR123D Features Typical Applications GB GAL GAR 1 Absolute Maximum Ratings Symbol Conditions IGBT Inverse Diode Freewheeling Diode Module Characteristics Symbol Conditions IGBT 07-03-2007 RAA Values Units ...
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SKM 200GB123D ® SEMITRANS 3 Trench IGBT Modules SKM 200GB123D SKM 200GAL123D SKM 200GAR123D Features Typical Applications GB GAL GAR 2 Characteristics Symbol Conditions Inverse Diode Freewheeling Diode Module This is an electrostatic discharge sensitive device (ESDS), international standard IEC ...
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SKM 200GB123D ® SEMITRANS 3 Trench IGBT Modules SKM 200GB123D SKM 200GAL123D SKM 200GAR123D Features Typical Applications GB GAL GAR Symbol Conditions Z th(j-c)l Z th(j-c)D 07-03-2007 RAA Values Units © by SEMIKRON ...
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SKM 200GB123D Fig. 1 Typ. output characteristic, inclusive R Fig. 3 Typ. turn-on /-off energy = Fig. 5 Typ. transfer characteristic 4 Fig. 2 Rated current vs. temperature I CC'+ EE' Fig. 4 Typ. turn-on /-off ...
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SKM 200GB123D Fig. 7 Typ. switching times vs Fig. 9 Transient thermal impedance Fig. 11 Typ. CAL diode peak reverse recovery current 5 Fig. 8 Typ. switching times vs. gate resistor R Fig. 10 CAL diode forward characteristic ...
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SKM 200GB123D UL Recognized 6 07-03-2007 RAA File 63 532 © by SEMIKRON ...