BSM25GAL120DN2 Siemens Semiconductor Group, BSM25GAL120DN2 Datasheet - Page 4

• Manufacturer Part Number: BSM25GAL120DN2
• Description: IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate)
• Manufacturer: Siemens Semiconductor Group

Semiconductor Group
Electrical Characteristics, at T
Parameter
Chopper Diode
Chopper diode forward voltage
I
I
Reverse recovery time, chopper
I
d i
Reverse recovery charge, chopper
I
d i
T
T
FC
FC
FC
FC
j
j
F
F
= 25 °C
= 125 °C
/ dt = -800 A/µs, T
/ dt = -800 A/µs
= 35 A, V
= 35 A, V
= 35 A, V
= 35 A, V
GE
GE
R
R
= -600 V, V
= -600 V, V
= 0 V, T
= 0 V, T
j
= 125 °C
j
j
= 25 °C
= 125 °C
GE
GE
= 0 V
= 0 V
j
= 25 °C, unless otherwise specified
4
Symbol
V
t
Q
rrC
FC
rrC
min.
-
-
-
-
-
Values
typ.
250
2.3
1.8
2
5
BSM 25 GAL 120 DN2
max.
-
-
-
-
2.8
Mar-29-1996
Unit
V
ns
µC