BSM25GD120D2 Siemens Semiconductor Group, BSM25GD120D2 Datasheet
BSM25GD120D2
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BSM25GD120D2 Summary of contents
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IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 25 GD 120 D2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Gate-emitter ...
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Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage ° ...
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Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 Gon Rise time V = 600 ...
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Power dissipation tot C parameter: T 150 °C j 220 W 180 P tot 160 140 120 100 Collector current ...
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Typ. output characteristics parameter µ ° 17V 15V 40 I 13V C 11V ...
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Typ. gate charge Gate parameter puls 600 Reverse biased safe ...
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Typ. switching time inductive load , T = 125° par 600 ± ...
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Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter =125° 0.0 0.5 1.0 1.5 Semiconductor Group Transient thermal ...
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Package Outlines Dimensions in mm Weight: 190 g Semiconductor Group Circuit Diagram 9 BSM 25 GD 120 D2 Feb-10-1997 ...