PDMB150B12C2 Nihon Inter Electronics (NIEC), PDMB150B12C2 Datasheet
PDMB150B12C2
Manufacturer Part Number
PDMB150B12C2
Description
IGBT MODULE Dual 150A 1200V
Manufacturer
Nihon Inter Electronics (NIEC)
Datasheet
1.PDMB150B12C2.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PDMB150B12C2
Manufacturer:
SANREX
Quantity:
1 000
Part Number:
PDMB150B12C2
Quantity:
60
IGBT
CIRCUIT
Forward Current
Peak Forward Voltage
Reverse Recovery Time
Thermal Impedance
Collector-Emitter Voltage
Gate - Emitter Voltage
Collector Current
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Mounting Torque
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Switching Time
ELECTRICAL CHARACTERISTICS
FREE WHEELING DIODES RATINGS & CHARACTERISTICS
MAXMUM RATINGS
THERMAL CHARACTERISTICS
Characteristic
MODULE
MODULE
MODULE
MODULE
Characteristic
Characteristic
Item
Item
DC
1 ms
Module Base to Heat sink
Bus Bar to Main Terminals
Rise Time
Turn-on Time
Fall Time
Turn-off Time
Dual 150A 1200V
Dual 150A 1200V
Dual 150A 1200V
Dual 150A 1200V
(Tc=25 C)
Symbol
DIODE
IGBT
1 ms
DC
V
t
rr
F
(Tc=25 C)
I
I
F
F
=150A,V
=150A,V
Symbol
Symbol
Symbol
Symbol
V
V
C ies
R
V
V
F
ｔ on
ｔ off
V
I
I
T
ｔ r
I
CE(sat)
ｔ f
P
GE(th)
CES
GES
I
I
I
th(j-c)
T
TOR
FM
CES
GES
ISO
C
C
stg
F
C
j
GE
GE
=0V
=-10V,di/dt=300A/
V
V
I
V
V
V
R
R
V
Junction to Case
C
Test Condition
CE
GE
CE
CE
CC
L
G
GE
=150A,V
= 4 ohm
=3.6 ohm
=1200V,V
=+/- 20V,V
=5V,I
=10V,V
= 600V
= +/- 15V
Test Condition
Test Condition
OUTLINE DRAWING
C
=150mA
GE
GE
(Tc=25 C)
=15V
=0V,f=1MHz
GE
CE
=0V
=0V
s
PDMB150B12C2
Rated Value
-40 to +150
-40 to +125
+/ - 20
1200
2500
2.04
150
300
730
150
300
PDMB150B12C2
PDMB150B12C2
PDMB150B12C2
PDMB150B12C2
Min.
4.0
−
−
−
−
-
-
-
-
Min.
Min.
-
-
-
-
12,600
Typ.
0.25
0.40
0.25
0.80
1.9
-
-
-
Typ.
Typ.
Approximate Weight : 320g
1.9
0.2
-
-
4- fasten- tab No 110
Dimension(mm)
Max.
0.45
0.35
1.10
Max.
Max.
3.0
1.0
2.4
8.0
0.7
0.16
0.32
2.4
0.3
-
N m
Unit
Unit
Unit
Unit
Unit
C/W
mA
pF
W
V
V
V
V
A
V
A
V
C
C
A
s
s
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PDMB150B12C2 Summary of contents
Page 1
... Test Condition V I =150A,V = =150A,V =-10V,di/dt=300A Symbol IGBT R Junction to Case th(j-c) DIODE PDMB150B12C2 PDMB150B12C2 PDMB150B12C2 PDMB150B12C2 OUTLINE DRAWING Approximate Weight : 320g PDMB150B12C2 1200 +/ - 20 150 300 730 -40 to +150 -40 to +125 2500 2.04 Min. Typ. = =0V CE =15V - 1.9 GE =150mA 4.0 - ...
Page 2
... Z T =25℃ 1.2 C Cies 1 0.8 Coes 0.6 0.4 Cres 0 100 200 (V) CE PDMB150B12C2 PDMB150B12C PDMB150B12C PDMB150B12C Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) I =75A 300A C 150A Gate to Emitter Voltage V (V) GE Fig.4- Gate Charge vs. Collector to Emitter Voltage R =4Ω =25℃ ...
Page 3
... Fig.11- Transient Thermal Impedance - Time t (s) PDMB150B12C2 PDMB150B12C2 PDMB150B12C2 PDMB150B12C2 Fig.8- Forward Characteristics of Free Wheeling Diode T =25℃ T =125℃ Forward Voltage V (V) F Fig.10- Reverse Bias Safe Operating Area 0 400 800 1200 ...