40MT120UH International Rectifier Corp., 40MT120UH Datasheet

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40MT120UH

Manufacturer Part Number
40MT120UH
Description
HALF-BRIDGE IGBT MTP UltraFast NPT IGBT
Manufacturer
International Rectifier Corp.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
40MT120UHA
Quantity:
560
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Part Number:
40MT120UHAPBF
Quantity:
70 000
"HALF-BRIDGE" IGBT MTP
• Positive V
• 10µs Short Circuit Capability
• HEXFRED
• Low Diode V
• Square RBSOA
• Aluminum Nitride DBC
• Optional SMT Thermistor (NTC)
• Very Low Stray Inductance Design for
• UL approved (file E78996)
• Rugged with UltraFast Performance
• Benchmark Efficiency above 20KHz
• Outstanding ZVS and Hard Switching
• Low EMI, requires Less Snubbing
• Excellent Current Sharing in Parallel
• Direct Mounting to Heatsink
• PCB Solderable Terminals
www.irf.com
Absolute Maximum Ratings
Features
Benefits
V
I
I
I
I
I
V
V
P
UltraFast Non Punch Through (NPT)
Technology
UltraSoft Reverse Recovery
High Speed Operation
Optimized for Welding, UPS and SMPS
Applications
Operation
Operation
C
CM
LM
F
FM
CES
GE
ISOL
D
Parameters
Collector-to-Emitter Breakdown Voltage
Continuos Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation (only IGBT)
CE(ON)
TM
F
Antiparallel Diodes with
Temperature Coefficient
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
= 25°C
= 105°C
= 105°C
= 25°C
= 100°C
MMTP
UltraFast NPT IGBT
Max
1200
2500
± 20
160
160
160
463
185
80
40
21
40MT120UH
V
I27126 rev. C 02/03
CES
T
I
C
C
= 25°C
= 80A
= 1200V
Units
W
V
A
V
1

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40MT120UH Summary of contents

Page 1

... Diode Continuous Forward Current F I Diode Maximum Forward Current FM V Gate-to-Emitter Voltage GE V RMS Isolation Voltage, Any Terminal to Case min ISOL P Maximum Power Dissipation (only IGBT) D www.irf.com I27126 rev. C 02/03 40MT120UH UltraFast NPT IGBT V CES T MMTP Max 1200 @ T = 25° 105° ...

Page 2

... I27126 rev. C 02/03 Electrical Characteristics @ T Parameters V Collector-to-Emitter Breakdown Voltage 1200 (BR)CES ∆V / Temperature Coeff. of (BR)CES ∆T Breakdown Voltage J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V / Temperature Coeff. of GE(th) ∆T Threshold Voltage J g Transconductance fe I Zero Gate Voltage Collector Current ...

Page 3

... Diode Characteristics @ T Parameters V Diode Forward Voltage Drop FM E Reverse Recovery Energy of the Diode rec trr Diode Reverse Recovery Time Irr Peak Reverse Recovery Current Thermistor Specifications (40MT120UHT only) Parameters (1) R Resistance 0 (1) (2) β Sensitivity index of the thermistor material ( are thermistor's temperatures ...

Page 4

... I27126 rev. C 02/03 100 (°C) Fig Maximum DC Collector Current vs. Case Temperature 1000 100 10 1 0.1 0. 100 V CE (V) Fig Forward SOA T = 25°C; T 150°C ≤ 600 500 400 300 200 100 0 0 100 120 140 160 ...

Page 5

... VGE = 8.0V 100 Fig Typ. IGBT Output Characteristics 120 100 0 Fig Typ. Diode Forward Characteristics 40MT120UH Bulletin I27126 rev. B 10/ ( 25° 80µs J -40°C 25°C 125°C 1.0 2.0 3.0 4 80µs 5 ...

Page 6

... I27126 rev. C 02/ (V) Fig Typical V vs -40° (V) Fig Typical V vs 125° 80A 40A 20A ...

Page 7

... C = 400V 10000 E OFF 1000 100 600V 40MT120UH Bulletin I27126 rev. B 10/02 td OFF (A) Fig Typ. Switching Time vs 125°C; L=250µ 400V 5Ω 15V ...

Page 8

... I27126 rev. C 02/ (A) Fig Typical Diode 125° 200 400 600 di F /dt (A/µs) Fig. 19- Typical Diode I vs 600V 15V 40A 125° 5.0 Ω ...

Page 9

... Cies Coes Cres (V) Fig. 21- Typ. Capacitance vs 0V 1MHz GE 600V 100 200 300 400 Total Gate Charge (nC) Fig Typical Gate Charge vs 5.0A 600µH CE 40MT120UH Bulletin I27126 rev. B 10/02 100 500 GE 9 ...

Page 10

... I27126 rev. C 02/ 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 0.0001 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 1E-006 1E-005 Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 10 τ J τ J τ 1 τ ...

Page 11

... DUT 0 1K Fig. CT.1 - Gate Charge Circuit (turn-off) Driver D C DUT Fig. CT.3 - S.C. SOA Circuit www.irf.com VCC Fig. CT.2 - RBSOA Circuit diode clamp / DUT - 5V 900V Rg Fig. CT.4 - Switching Loss Circuit 40MT120UH Bulletin I27126 rev. B 10/02 L DUT 1000V Rg L DUT / VCC DRIVER 11 ...

Page 12

... I27126 rev. C 02/03 Outline Table Note: unused terminals are not assembled in the package 12 Electrical Circuit Dimensions in millimetres Resistance in ohms www.irf.com ...

Page 13

... Empty = no special option T Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. Visit us at www.irf.com for sales contact information. 10/02 40MT120UH Bulletin I27126 rev. B 10/02 = Thermistor TAC Fax: (310) 252-7309 13 ...

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