MG200Q2YS60A TOSHIBA Semiconductor CORPORATION, MG200Q2YS60A Datasheet
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MG200Q2YS60A
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MG200Q2YS60A Summary of contents
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... TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS60A (1200V/200A 2in1) High Power Switching Applications Motor Control Applications · Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) The electrodes are isolated from case. · ...
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... JAPAN 0.8 36.7 0.8 2 – 3.0 119 0 MG200Q2YS60A Unit 0 Open (H) 8. Open 2001-08-28 ...
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... 200 Symbol Test Condition = ¾ 600 (Fo MG200Q2YS60A Rating Unit 1200 V ±20 V 200 A 400 200 A 400 2000 150 °C -40~125 °C -20~100 °C 2500 (AC 1 min) ...
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... Symbol Test Condition Inverter IGBT stage R th (j-c) Inverter FRD stage R With silicon compound th (c- 90 (off) 4 MG200Q2YS60A Min Typ. Max ¾ ¾ 0.062 ¾ ¾ 0.136 ¾ ¾ 0.013 90% 10 2001-08-28 Unit °C/W °C/W ...
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... V V · CC 14.8 V < < = 17.0 V · GE > · G < = 125°C T · j <Gate voltage> use this product case V is less than 14.8 V, fault signal F GE must be provided higher than 14.8 V. may not be output even under error conditions MG200Q2YS60A 2001-08-28 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. MG200Q2YS60A 6 000707EAA 2001-08-28 ...