BSM150GB120DN2 Siemens Semiconductor Group, BSM150GB120DN2 Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/6/607/siemens_semiconductor_group_sml.jpg)
BSM150GB120DN2
Manufacturer Part Number
BSM150GB120DN2
Description
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
Manufacturer
Siemens Semiconductor Group
Datasheet
1.BSM150GB120DN2.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSM150GB120DN2
Manufacturer:
SEMIKRON
Quantity:
25
Part Number:
BSM150GB120DN2
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSM150GB120DN2
Quantity:
50
Company:
Part Number:
BSM150GB120DN2E
Manufacturer:
INFINEON
Quantity:
154
Company:
Part Number:
BSM150GB120DN2F_E3256
Manufacturer:
EUPEC
Quantity:
100
Semiconductor Group
Electrical Characteristics, at T
Parameter
Static Characteristics
Gate threshold voltage
V
Collector-emitter saturation voltage
V
V
V
V
Gate-emitter leakage current
V
AC Characteristics
Transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Zero gate voltage collector current
GE
GE
GE
CE
CE
GE
CE
CE
CE
CE
= 1200 V, V
= 1200 V, V
= 20 V, I
= 25 V, V
= 25 V, V
= 25 V, V
= V
= 15 V, I
= 15 V, I
= 20 V, V
CE,
I
C
C
C
C
GE
GE
GE
CE
= 6 mA
= 150 A
= 150 A, T
= 150 A, T
GE
GE
= 0 V
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= 0 V, T
= 0 V, T
j
j
= 25 °C
= 125 °C
j
j
= 25 °C
= 125 °C
j
= 25 °C, unless otherwise specified
2
Symbol
V
V
I
I
g
C
C
C
CES
GES
fs
GE(th)
CE(sat)
iss
oss
rss
min.
-
-
-
-
-
-
-
-
4.5
62
Values
typ.
-
-
11
5.5
2.5
3.1
2
8
1.6
0.6
BSM 150 GB 120 DN2
max.
-
-
-
-
-
6.5
3
3.7
2.8
320
Mar-28-1996
Unit
V
mA
nA
S
nF