IXKN75N60C IXYS Corporation, IXKN75N60C Datasheet
IXKN75N60C
Manufacturer Part Number
IXKN75N60C
Description
600V coolMOS power MOSFET
Manufacturer
IXYS Corporation
Datasheet
1.IXKN75N60C.pdf
(4 pages)
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Part Number:
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CoolMOS
N-Channel Enhancement Mode
Low R
Symbol
V
V
I
I
dv/dt
E
E
Symbol
R
V
I
I
Q
Q
Q
t
t
t
t
V
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
MOSFET
D25
D90
DSS
GSS
d(off)
d(on)
r
f
DSS
GS
AS
AR
GSth
F
DSon
g
gd
thJC
gs
DSon
, High V
Conditions
T
T
T
V
T
I
I
Conditions
V
V
V
V
(reverse conduction) I
D
D
VJ
C
C
VJ
DS
GS
DS
DS
GS
= 10 A; L = 36 mH; T
= 20 A; L = 5 µH; T
= 25°C
= 90°C
= 25°C to 150°C
= 150°C
V
V
I
= 20 V; I
= V
< V
= 10 V; I
= ±20 V; V
D
GS
GS
= 100 A; R
™ 1)
= 10 V; V
= 10 V; V
DSS
DSS
DSS
; I
; V
F
D
D
GS
Power MOSFET
≤ 100A;⎮di
= I
= 5 mA;
MOSFET
DS
= 0 V; T
D90
DS
DS
G
= 0 V
= 1 Ω
= 350 V; I
= 380 V;
T
F
VJ
VJ
C
C
= 37.5 A; V
F
= 25°C
= 25°C
= 25°C
= 125°C
/dt⎮≤ 100A/µs
D
(T
= 100 A
VJ
GS
= 25°C, unless otherwise specified)
= 0 V
min.
2.1
Characteristic Values
Maximum Ratings
100
500
240
110
typ.
0.9
30
50
20
30
10
600
±20
1.8
75
50
6
1
G
S
max.
0.22 K/W
200 nA
3.9
1.1
36 mΩ
50 µA
V/ns
D
S
mJ
nC
nC
nC
µA
ns
ns
ns
ns
V
V
A
A
V
V
J
miniBLOC, SOT-227 B
G = Gate
Either source terminal at miniBLOC can be used
as main or kelvin source
Features
• miniBLOC package
• fast CoolMOS
• Enhanced total power density
Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
- Electrically isolated copper base
- Low coupling capacitance to the heatsink for
- High power dissipation due to AlN
- International standard package SOT-227
- Easy screw assembly
3
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
- Low thermal resistance
600 V
rd
V
reduced EMI
ceramic substrate
inductive switching (UIS)
due to reduced chip thickness
generation
DSS
1)
CoolMOS
Infineon Technologies AG.
IXKN 75N60C
D = Drain
™ 1)
75 A
I
power MOSFET
™
D25
is a trademark of
G
36 mΩ Ω Ω Ω Ω
S
R
S = Source
DS(on)
D
20080523a
1 - 4
S
Related parts for IXKN75N60C
IXKN75N60C Summary of contents
Page 1
CoolMOS Power MOSFET N-Channel Enhancement Mode Low R , High V MOSFET DSon DSS MOSFET Symbol Conditions 25°C to 150°C DSS 25°C D25 90°C D90 ...
Page 2
Component Symbol Conditions ≤ 1 mA; 50/ ISOL ISOL stg M mounting torque d terminal connection torque (M4) Symbol Conditions R with heatsink compound thCH Weight miniBLOC, SOT-227 B M4 screws (4x) supplied © ...
Page 3
V = 10V 300µ 0 Volts D S Fig. 1 Typical output characteristics 10V ...
Page 4
V = 350V 80A 10mA 120 180 240 300 360 420 480 540 Q - nanoCoulombs G Fig. 7 Typical ...