APT50M65JFLL Microsemi Corporation, APT50M65JFLL Datasheet

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APT50M65JFLL

Manufacturer Part Number
APT50M65JFLL
Description
Manufacturer
Microsemi Corporation
Datasheet

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APT50M65JFLL
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1 001
STATIC ELECTRICAL CHARACTERISTICS
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Q
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol
Symbol
T
R
V
BV
V
V
J
V
I
I
E
E
DS(on)
GS(th)
,T
I
I
DSS
GSS
P
GSM
T
DSS
DM
I
AR
D
GS
AR
AS
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
g
. Power MOS 7
POWER MOS 7
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of low loss, high voltage, N-Channel
®
combines lower conduction and switching losses
1
1
(Repetitive and Non-Repetitive)
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
DS
C
APT Website - http://www.advancedpower.com
= V
C
= 25°C
1
= 25°C
4
GS
GS
DS
, I
2
DS
®
= ±30V, V
GS
D
= 400V, V
by significantly lowering R
= 500V, V
R
(V
= 2.5mA)
= 0V, I
GS
FREDFET
= 10V, 29A)
D
DS
GS
= 250µA)
GS
= 0V)
= 0V, T
= 0V)
All Ratings: T
C
= 125°C)
APT50M65JFLL
DS(ON)
500V 58A
C
= 25°C unless otherwise specified.
MIN
500
3
APT50M65JFLL
-55 to 150
ISOTOP
3000
TYP
4.16
500
232
±30
±40
520
300
58
58
50
®
0.065
±100
1000
MAX
250
5
"UL Recognized"
0.065
G
Ohms
Amps
Watts
Amps
UNIT
Volts
Volts
W/°C
UNIT
Volts
Volts
mJ
µA
nA
°C
D
S

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APT50M65JFLL Summary of contents

Page 1

... 2.5mA APT Website - http://www.advancedpower.com APT50M65JFLL 500V 58A 0.065 DS(ON) "UL Recognized" ISOTOP ® 25°C unless otherwise specified. C APT50M65JFLL 500 58 232 ±30 ±40 520 4.16 -55 to 150 300 58 50 3000 MIN TYP MAX 500 0.065 250 1000 ±100 ...

Page 2

... Starting numbers reflect the limitations of the test circuit rather than the dt device itself. 6 Eon includes diode reverse recovery. See figures 18, 20. SINGLE PULSE - RECTANGULAR PULSE DURATION (SECONDS) APT50M65JFLL MIN TYP MAX 7010 1390 87 141 1035 ...

Page 3

... FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.00 0. -55°C 0. 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 100 125 150 FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE APT50M65JFLL 15 &10V 6. 5. DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS 1.4 NORMALIZED TO V ...

Page 4

... V = 333V 67A 125°C 4000 100µH E includes ON diode reverse recovery. 3000 2000 1000 0 110 FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE APT50M65JFLL C iss C oss C rss =+25°C 0.7 0.9 1.1 1.3 1 110 I ( off ...

Page 5

... H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) 14.9 (.587) * Source 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) APT50M65JFLL 90% Gate Voltage t d(off) Drain Voltage 90% 10 Drain Current Switching Energy Hex Nut M4 (4 places) 25.2 (0.992) 25.4 (1.000) 0.75 (.030) 12.6 (.496) ...

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