STPS12045 STMicroelectronics, STPS12045 Datasheet

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STPS12045

Manufacturer Part Number
STPS12045
Description
Power Schottky Rectifier
Manufacturer
STMicroelectronics
Datasheet

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ABSOLUTE RATINGS (limiting values) per diode
MAIN PRODUCT CHARACTERISTICS
FEATURES AND BENEFITS
DESCRIPTION
Dual power Schottky rectifier suited for Switched
Mode Power Supplies and high frequency DC to
DC converters.
Packaged in ISOTOP, this device is especially in-
tended for use in low voltage, high frequency in-
verters, free wheeling and polarity protection
applications.
* :
June 1999 - Ed: 3A
ISOTOP is a registered trademark of STMicroelectronics
Symbol
I
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW THERMAL RESISTANCE
INSULATED PACKAGE:
Insulating voltage = 2500 V
Capacitance = 45 pF
V
F(RMS)
dV/dt
I
I
I
I
F(AV)
T
FSM
RRM
RSM
dPtot
RRM
Tj
stg
dTj
V
Tj (max)
F
V
I
F(AV)
(max)
®
RRM
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Rth j a
1
thermal runaway condition for a diode on its own heatsink
(RMS)
2 x 60 A
150 °C
0.67 V
45 V
Parameter
POWER SCHOTTKY RECTIFIER
Tc = 95°C
tp = 10 ms Sinusoidal
tp = 2 s square F = 1kHz
tp = 100 s square
= 0.5
Per diode
Per device
K2
K1
A2
A1
STPS12045TV
ISOTOP
- 55 to + 150
TM
10000
Value
125
120
900
150
45
60
2
5
V/ s
Unit
°C
V
A
A
A
A
A
C
1/4

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STPS12045 Summary of contents

Page 1

... Rth j a ISOTOP is a registered trademark of STMicroelectronics June 1999 - Ed: 3A POWER SCHOTTKY RECTIFIER 150 °C 0.67 V Parameter Tc = 95° Sinusoidal square F = 1kHz tp = 100 s square STPS12045TV ISOTOP Value 45 125 60 Per diode Per device 120 900 ...

Page 2

... STPS12045TV THERMAL RESISTANCES Symbol R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode (Per diode) + P(diode STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage current Forward voltage drop F Pulse test : * tp = 380 s, < 2% ...

Page 3

... VFM(V) 1E+1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Fig.4 : Relative variation of thermal transient impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.8 = 0.5 0.6 Tc=75°C 0.4 = 0.2 Tc=100°C = 0.1 Tc=125°C 0.2 Single pulse 0.0 1E-1 1E+0 1E-3 Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 10.0 1.0 0 Tj=25°C STPS12045TV tp(s) =tp/T 1E-2 1E-1 1E+0 VR( 5E+0 F=1MHz Tj=25°C 50 3/4 ...

Page 4

... STPS12045TV PACKAGE MECHANICAL DATA ISOTOP Type Marking STPS12045TV STPS12045TV Cooling method: by conduction (C) Recommended torque value: 1.3 N.m. Maximum torque value: 1.5 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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