IXFN44N80P IXYS Corporation, IXFN44N80P Datasheet
IXFN44N80P
Manufacturer Part Number
IXFN44N80P
Description
Manufacturer
IXYS Corporation
Datasheet
1.IXFN44N80P.pdf
(4 pages)
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Part Number:
IXFN44N80P
Quantity:
113
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
I
Mounting torque
Terminal torque
Test Conditions
V
V
V
V
V
S
ISOL
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
TM
< 1 mA, 10 seconds
= 0 V, I
= V
= ± 30 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
DSS
HiPerFET
, I
D
D
D
= 800 μA
= 8 mA
= 0.5 I
G
DS
= 10 Ω
= 0 V
TD25
GS
, Note 1
= 1 MΩ
DD
T
≤ V
J
= 125°C
DSS
JM
,
IXFN 44N80P
800
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in.
2500
3000
± 30
± 40
800
800
100
694
150
300
3.4
39
22
80
10
30
± 200
190
Max.
5.0
1.5
50
V/ns
mΩ
mA
mJ
V~
V~
nA
μA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
miniBLOC, SOT-227 B (IXFN)
Features
•
•
•
•
•
•
•
•
Applications
•
•
•
•
•
•
•
Advantages
•
•
•
G = Gate
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
International standard package
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
DS(on)
DSS
E153432
DS (on)
G
HDMOS
= 800
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
S
D = Drain
190 mΩ Ω Ω Ω Ω
250
D
TM
39
process
DS99503E(06/06)
S
ns
A
V
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IXFN44N80P Summary of contents
Page 1
TM PolarHV HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V Continuous GS V Transient GSM I ...
Page 2
Symbol Test Conditions 0 Note D25 C iss MHz oss rss t ...
Page 3
Fig. 1. Output Characte r is tics @ olts D S Fig. 3. Output Characte r is tics @ ...
Page 4
Fig. 7. Input Adm ittance ° 125 ° ° 3 olts G S Fig. 9. Sour ce ...