MJ10023 ON Semiconductor, MJ10023 Datasheet
MJ10023
Related parts for MJ10023
MJ10023 Summary of contents
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... SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode The MJ10023 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical particularly suited for line–operated switchmode applications such as: AC and DC Motor Controls ...
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... MJ10023 Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ELECTRICAL CHARACTERISTICS Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ...
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... Figure 4. Base–Emitter Saturation Voltage 400 200 100 0.6 + 0.8 4.5 10 Figure Output Capacitance MJ10023 100 0.05 0.1 0.2 0.5 1.0 2.0 5 BASE CURRENT (AMP 100 C 5.0 2 COLLECTOR CURRENT (AMPS 100 200 ...
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... MJ10023 Table 1. Test Conditions for Dynamic Performance V CEO(sus) 20 Ω Varied to Attain 100 mA L coil = 10 mH coil = 0.7 Ω V clamp = V CEO(sus CEM TIME CEM 90% V CEM 90 ...
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... Figure 11. Typical Turn–Off Switching Times R θJC (t) = r(t) R θJC R θJC = 0.7 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME J(pk) – (pk) R θJC (t) 10 100 t, TIME (ms) Figure 12. Thermal Response MJ10023 P SWT = 1 However, at lower test currents this 2.0 5 ...
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... MJ10023 The Safe Operating Area figures shown in Figures 13 and 14 are specified for these devices under the test conditions shown. 100 10 µs 50 (TURN–ON SWITCHING 5.0 dc 2.0 1.0 0 0.2 0.1 BONDING WIRE LTD 0.05 THERMAL LTD SECOND BREAKDOWN LTD 0.02 0.01 1.0 2.0 5 COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 13 ...
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... B G 0.430 BSC H 0.215 BSC K 0.440 0.480 L 0.665 BSC N 0.760 0.830 Q 0.151 0.165 1.187 BSC V 0.131 0.188 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 197A–05 TO–204AE (TO–3) ISSUE J MJ10023 MILLIMETERS MAX MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77 7 ...
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... Motorola, Inc. Motorola, Inc Equal Mfax is a trademark of Motorola, Inc. JAPAN: Nippon Motorola Ltd.; SPD, Strategic Planning Office, 141, 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan. 81–3–5487–8488 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Bipolar Power Transistor Device Data MJ10023/D ...