STPS120L15 STMicroelectronics, STPS120L15 Datasheet - Page 2

• Manufacturer Part Number: STPS120L15
• Description: Low Drop OR-Ing Power Schottky Rectifier
• Manufacturer: STMicroelectronics

STPS120L15TV
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test :
To evaluate the conduction losses use the following equation :
P = 0.18 x I
Fig. 3: Normalized avalanche power derating
versus pulse duration.
2/4
THERMAL RESISTANCES
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
20
18
16
14
12
10
0.001
0.01
Symbol
8
6
4
2
0
Symbol
0.1
R
R
0
0.01
1
PF(av)(W)
V
th (j-c)
I
th (c)
P
R
F
P
ARM
ARM p
*
*
10
(1µs)
(t )
= 0.05
F(AV)
0.1
Junction to case
* tp = 380 µs, < 2%
Reverse leakage current
Forward voltage drop
20
= 0.1
+ 2.2 10
Parameter
1
30
IF(av)(A)
= 0.2
t (µs)
p
-3
x I
40
F
10
2
= 0.5
(RMS)
50
Parameter
100
= 1
=tp/T
Tj = 100 C
Tj = 25 C
Tj = 100°C
Tj = 25 C
Tj = 125 C
60
T
Tests conditions
tp
1000
70
Fig. 2: Average forward current versus ambient
temperature ( =1) (per diode).
70
60
50
40
30
20
10
Fig. 4: Normalized avalanche power derating
versus junction temperature.
1.2
0.8
0.6
0.4
0.2
0
1
0
V
V
I
I
0
F
F
0
P
IF(av)(A)
R
R
ARM
P
= 60 A
= 60 A
ARM p
= 5V
= 12V
=tp/T
(25°C)
(t )
Per diode
Total
Coupling
25
T
25
tp
50
Min.
50
Tamb(°C)
T (°C)
j
75
Typ.
0.27
450
0.7
Value
0.45
0.28
0.1
Rth(j-a)=2.5°C/W
75
100
Max.
0.43
0.31
2.2
22
Rth(j-a)=Rth(j-c)
100
125
Unit
Unit
C/W
mA
mA
A
V
125
150