SK35GD065ET Semikron International, SK35GD065ET Datasheet
SK35GD065ET
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SK35GD065ET Summary of contents
Page 1
... SK35GD065ET ® SEMITOP 3 IGBT Module SK35GD065ET Preliminary Data Features Typical Applications GD-ET 1 Absolute Maximum Ratings Symbol Conditions IGBT Inverse Diode Module Characteristics Symbol Conditions IGBT 21-02-2007 SCT Values Units min. typ. max. Units © by SEMIKRON ...
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... SK35GD065ET ® SEMITOP 3 IGBT Module SK35GD065ET Preliminary Data Features Typical Applications GD-ET 2 Characteristics Symbol Conditions Inverse Diode Temperature sensor This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability ...
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... SK35GD065ET Fig. 1 Typ. output characteristic, inclusive R Fig. 3 Typ. turn-on /-off energy = CC'+ EE' Fig. 4 Typ. turn-on /-off energy = f (R Fig. 6 Typ. gate charge characteristic 21-02-2007 SCT ) G © by SEMIKRON ...
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... SK35GD065ET Fig. 7 Typ. switching times vs Fig. 8 Typ. switching times vs. gate resistor R Fig. 10 CAL diode forward characteristic 21-02-2007 SCT G © by SEMIKRON ...
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... SK35GD065ET UL recognized file 5 21-02-2007 SCT no 532 © by SEMIKRON ...