MG600Q1US61 TOSHIBA Semiconductor CORPORATION, MG600Q1US61 Datasheet - Page 6

• Manufacturer Part Number: MG600Q1US61
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100000
50000
30000
10000
10000
1000
5000
3000
1000
1000
100
500
300
100
10
10
0.1
0
0
T j < = 125°C
V GE = ±15 V
R G = 2 W
Common emitter
f = 1 MHz
T j = 25°C
200
0.3
100
Collector-emitter voltage V
Collector-emitter voltage V
0.5
Forward current I
400
200
Reverse bias soa
1
I
600
I
rr
C – V
, t
300
rr
3
V
– I
CE
I rr
V CC = 600 V
R G = 2 W
V GE = ±15 V
800
5
F
F
400
10
1000
(A)
CE
CE
: T j = 25°C
: T j = 125°C
t rr
(V)
(V)
500
30
1200
50
Cies
Cres
Coes
1400
600
100
6
0.0003
0.003
0.001
3000
1000
0.03
0.01
100
300
100
0.3
0.1
10
30
10
0.001
1
3
1
0
1
* Single nonrepetitive
Curves must be with
increase in
temperature.
Tc = 25°C
V CC = 600 V
R G = 2 W
V GE = ±15 V
I C max (continuous)
pulse Tc = 25°C
I C max (pulsed) *
3
100
Collector-emitter voltage V
0.01
: T j = 25°C
: T j = 125°C
Forward current I
10
200
Pulse width t
Safe operating area
R
E
30
th (t)
dsw
300
0.1
– I
– t
1 ms*
100
F
w
w
F
MG600Q1US61
400
(s)
300
(A)
100 ms*
Transistor stage
CE
Diode stage
1
50 ms*
(V)
500
1000
2002-10-04
3000
600
10