MG200Q2YS65H TOSHIBA Semiconductor CORPORATION, MG200Q2YS65H Datasheet - Page 5

• Manufacturer Part Number: MG200Q2YS65H
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.001
0.01
1600
1200
0.1
800
400
0.001
1
0
6
5
4
3
2
1
0
0
0
Tc = 25°C
Common emitter
R L = 3 W
Tc = 25°C
V CC < = 900 V
T j < = 125°C
t w = 5 ms
200
Collector-emitter voltage V
400
V CE = 0
0.01
400
Pulse width t
Short circuit SOA
Charge Q
V
200 V
CE
800
R
600
, V
th (t)
400 V
0.1
GE
G
600 V
– t
800
1200
– Q
w
w
Transistor stage
(nC)
Diode stage
G
(s)
1000
CE
1
1600
(V)
1200
10
2000
1400
16
12
8
4
5
100000
10000
1000
1000
100
100
0.1
10
0.01
1
0
Common emitter
V GE = 0
f = 1 MHz
Tc = 25°C
T j < = 125°C
V GE = ±15 V
R G = 4.7 W
Collector-emitter voltage V
Collector-emitter voltage V
0.1
500
Reverse bias SOA
C – V
1
CE
MG200Q2YS65H
1000
CE
CE
Cres
10
C ies
(V)
(V)
C oes
2002-10-04
1500
100