2SD1051 Panasonic, 2SD1051 Datasheet
2SD1051
Manufacturer Part Number
2SD1051
Description
Manufacturer
Panasonic
Datasheet
1.2SD1051.pdf
(3 pages)
Transistors
2SD1051
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SB0819 (2SB819)
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2002
Note) * : Printed circuit board: Copper foil area of 1 cm
• High collector-emitter voltage (Base open) V
• Low collector power dissipation P
• M type package allowing easy automatic and manual insertion as
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
well as stand-alone fixing to the printed circuit board.
2. * 1: Pulse measurement
board thickness of 1.7 mm for the collector portion
* 2: Rank classification
Parameter
Rank
Parameter
h
FE
* 1
80 to 160
*
* 1, 2
Q
* 1
* 1
C
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
V
I
P
I
T
V
V
CBO
CEO
EBO
a
CP
I
I
I
C
stg
CE(sat)
BE(sat)
C
C
h
120 to 220
CBO
CEO
EBO
j
f
CBO
CEO
= 25°C
FE
T
ob
R
−55 to +150
CEO
Rating
I
I
V
V
V
V
I
I
V
V
C
C
C
C
150
2
Note) The part number in the parenthesis shows conventional part number.
1.5
CB
CE
EB
CE
CB
CB
50
40
= 1 mA, I
= 2 mA, I
= 1.5 A, I
= 2 A, I
5
3
1
or more, and the
SJC00206BED
= 10 V, I
= 5 V, I
= 5 V, I
= 20 V, I
= 5 V, I
= 20 V, I
B
B
= 0.2 A
E
B
C
C
E
Conditions
Unit
B
E
E
= 0
= 0
= 0.15 A
= 0
= 1 A
= − 0.5 A, f = 200 MHz
°C
°C
W
V
V
V
A
A
= 0
= 0
= 0, f = 1 MHz
R 0.7
(1.5)
3
(2.5)
(0.85)
0.55
6.9
Min
(1.5)
50
40
80
±0.1
±0.1
2
R 0.9
(2.5)
Typ
1
120
150
45
Max
100
220
1.5
10
1
1
2.5
M-A1 Package
1 : Base
2 : Collector
3 : Emitter
±0.1
0.45
Unit: mm
(1.0)
MHz
±0.05
Unit
µA
µA
µA
pF
V
V
V
V
1
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2SD1051 Summary of contents
Page 1
... Transistors 2SD1051 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0819 (2SB819) ■ Features • High collector-emitter voltage (Base open) V • Low collector power dissipation P • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. ...
Page 2
... 1.2 Copper plate at the collector 2 is more than area, 1 thickness 1.0 0.8 0.6 0.4 0 100 120 140 160 ( °C ) Ambient temperature T a BE(sat) C 100 = 25°C = −25° 75°C 0.1 0.01 0.01 0 Collector current I C ...
Page 3
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...