2SD1010 Panasonic, 2SD1010 Datasheet
2SD1010
Manufacturer Part Number
2SD1010
Description
Manufacturer
Panasonic
Datasheet
1.2SD1010.pdf
(3 pages)
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Transistors
2SD1010
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
• High forward current transfer ratio h
• Low collector-emitter saturation voltage V
• High emitter-base voltage (Collector open) V
• Low noise voltage NV
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise voltage
2. * : Rank classification
Parameter
Rank
Parameter
h
FE
400 to 800
*
R
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
FE
T
V
I
P
I
T
V
V
V
CBO
CEO
EBO
a
CP
I
600 to 1 200
I
C
stg
CE(sat)
NV
C
h
CBO
CEO
j
f
CBO
CEO
EBO
= 25°C
FE
T
CE(sat)
S
−55 to +150
EBO
Rating
I
I
I
V
V
V
I
V
V
R
C
C
E
C
100
300
150
g
CB
CE
CE
CB
CE
50
40
15
50
= 10 µA, I
= 10 µA, I
= 1 mA, I
= 10 mA, I
= 100 kΩ, Function = FLAT
SJC00204BED
= 20 V, I
= 10 V, I
= 10 V, I
= 20 V, I
= 10 V, I
1 000 to 2 000
B
T
C
E
Conditions
Unit
mW
B
C
B
E
E
C
mA
mA
= 0
°C
°C
V
V
V
= 0
= 0
= 1 mA
= 0
= 0
= 2 mA
= −2 mA, f = 200 MHz
= 1 mA, G
V
= 80 dB
0.45
0.7
2.5
+0.15
–0.1
±0.1
+0.6
–0.2
1
5.0
Min
400
50
40
15
±0.2
2 3
2.5
0.05
+0.6
–0.2
Typ
200
80
0.45
TO-92-B1 Package
2 000
Max
0.1
0.2
1
+0.15
–0.1
1 : Emitter
2 : Collector
3 : Base
4.0
Unit: mm
±0.2
MHz
Unit
mV
µA
µA
V
V
V
V
1
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2SD1010 Summary of contents
Page 1
... Transistors 2SD1010 Silicon NPN epitaxial planar type For low-frequency amplification ■ Features • High forward current transfer ratio h • Low collector-emitter saturation voltage V • High emitter-base voltage (Collector open) V • Low noise voltage NV ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) ...
Page 2
... 500 400 300 200 100 100 120 140 160 ( °C ) Ambient temperature T a CE(sat) C 100 = 75° 25°C 0.1 −25°C 0.01 0 100 ( mA ) Collector current I C ...
Page 3
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...