2SD1011 Panasonic, 2SD1011 Datasheet
2SD1011
Manufacturer Part Number
2SD1011
Description
Manufacturer
Panasonic
Datasheet
1.2SD1011.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SD1011
Manufacturer:
IXYS
Quantity:
2 000
Transistor
2SD1011
Silicon NPN epitaxial planer type
For low-frequency amplification
*
h
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
FE
Features
High foward current transfer ratio h
Low collector to emitter saturation voltage V
High emitter to base voltage V
Absolute Maximum Ratings
Electrical Characteristics
Rank
Rank classification
h
FE
Parameter
Parameter
400 ~ 800
R
600 ~ 1200
Symbol
V
V
V
I
I
P
T
T
CP
C
S
C
j
stg
CBO
CEO
EBO
EBO
I
I
V
V
V
h
V
f
NV
CBO
CEO
T
FE
(Ta=25˚C)
Symbol
CBO
CEO
EBO
CE(sat)
*
.
(Ta=25˚C)
FE
–55 ~ +150
.
Ratings
100
100
300
150
15
50
20
V
V
I
I
I
V
I
V
V
R
CE(sat)
C
C
E
C
g
CB
CE
CE
CB
CE
= 10 A, I
= 1mA, I
= 10 A, I
= 10mA, I
= 100k , Function = FLAT
= 60V, I
= 10V, I
= 10V, I
= 60V, I
= 10V, I
.
B
Unit
mW
C
mA
mA
Conditions
E
B
C
C
˚C
˚C
E
E
B
V
V
V
= 0
= 0
= 0
= 0
= 0
= 2mA
= –2mA, f = 200MHz
= 1mA, G
= 1mA
V
= 80dB
1.27
0.45
min
2.54 0.15
100
100
400
15
5.0 0.2
1
+0.2
–0.1
2
3
1.27
0.05
200
typ
80
0.45
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
+0.2
–0.1
1200
max
100
0.2
1
4.0 0.2
Unit: mm
MHz
Unit
mV
nA
V
V
V
V
A
1
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2SD1011 Summary of contents
Page 1
... Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Features High foward current transfer ratio h Low collector to emitter saturation voltage V High emitter to base voltage V EBO Absolute Maximum Ratings Parameter Symbol Collector to base voltage V CBO Collector to emitter voltage V CEO Emitter to base voltage ...
Page 2
... Collector current — 100 V =10V CE G =80dB V Function=FLAT Ta=25˚ =100k g 60 22k 0.01 0.03 0.1 0 Collector current I C 2SD1011 I — =10V CE 25˚C 50 Ta=75˚C –25˚ 0.4 0.8 1.2 1.6 2 Base to emitter voltage — 200 ...
Page 3
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...